Effects of rapid thermal annealing on structural, chemical, and electrical characteristics of atomic-layer deposited lanthanum doped zirconium dioxide thin film on 4H-SiC substrate

2016 ◽  
Vol 365 ◽  
pp. 296-305 ◽  
Author(s):  
Way Foong Lim ◽  
Hock Jin Quah ◽  
Qifeng Lu ◽  
Yifei Mu ◽  
Wan Azli Wan Ismail ◽  
...  
2008 ◽  
Vol 47 (4) ◽  
pp. 2848-2853 ◽  
Author(s):  
Kariyadan Remashan ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Jae-Hyung Jang

2015 ◽  
Vol 66 (5) ◽  
pp. 721-725 ◽  
Author(s):  
Junghyup Hong ◽  
Woochool Jang ◽  
Hyoseok Song ◽  
Chunho Kang ◽  
Hyeongtag Jeon

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.


2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1925-1930 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim

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