A method to give chemically stabilities of photoelectrodes for water splitting: Compositing of a highly crystalized TiO2 layer on a chemically unstable Cu2O photocathode using laser-induced crystallization process

2016 ◽  
Vol 363 ◽  
pp. 173-180 ◽  
Author(s):  
Masami Nishikawa ◽  
Masayuki Fukuda ◽  
Yukihiro Nakabayashi ◽  
Nobuo Saito ◽  
Nobuhiro Ogawa ◽  
...  
Keyword(s):  
Water Splitting ◽  
Crystallization Process ◽  
Tio2 Layer ◽  
Induced Crystallization

In situ growth of a TiO2 layer on a flexible Ti substrate targeting the interface recombination issue of BiVO4 photoanodes for efficient solar water splitting

2017 ◽  
Vol 5 (38) ◽  
pp. 20195-20201 ◽  
Author(s):  
Jiuwang Gu ◽  
Qitong Huang ◽  
Yufei Yuan ◽  
Kai-Hang Ye ◽  
Zilong Wang ◽  
...  
Keyword(s):  
Water Splitting ◽  
In Situ Growth ◽  
Tio2 Layer ◽  
Solar Water ◽  
Substrate Interface ◽  
Solar Water Splitting ◽  
Interface Recombination

In situ growth of a TiO2 layer targeting the substrate interface recombination issue of BiVO4 photoanodes for efficient solar water splitting.

scholarly journals Application of Polymers as a Tool in Crystallization—A Review

Polymers ◽  
2021 ◽  
Vol 13 (16) ◽  
pp. 2695
Author(s):  
Marcin Lemanowicz ◽  
Anna Mielańczyk ◽  
Tomasz Walica ◽  
Milena Kotek ◽  
Andrzej Gierczycki
Keyword(s):  
Crystallization Process ◽  
Rapid Development ◽  
Theoretical Models ◽  
Crystalline Materials ◽  
Crystal Properties ◽  
Efficient Control ◽  
Water And Wastewater ◽  
Controlled Crystallization ◽  
Scientific Periodicals ◽  
Induced Crystallization

The application of polymers as a tool in the crystallization process is gaining more and more interest among the scientific community. According to Web of Science statistics the number of papers dealing with “Polymer induced crystallization” increased from 2 in 1990 to 436 in 2020, and for “Polymer controlled crystallization”—from 4 in 1990 to 344 in 2020. This is clear evidence that both topics are vivid, attractive and intensively investigated nowadays. Efficient control of crystallization and crystal properties still represents a bottleneck in the manufacturing of crystalline materials ranging from pigments, antiscalants, nanoporous materials and pharmaceuticals to semiconductor particles. However, a rapid development in precise and reliable measuring methods and techniques would enable one to better describe phenomena involved, to formulate theoretical models, and probably most importantly, to develop practical indications for how to appropriately lead many important processes in the industry. It is clearly visible at the first glance through a number of representative papers in the area, that many of them are preoccupied with the testing and production of pharmaceuticals, while the rest are addressed to new crystalline materials, renewable energy, water and wastewater technology and other branches of industry where the crystallization process takes place. In this work, authors gathered and briefly discuss over 100 papers, published in leading scientific periodicals, devoted to the influence of polymers on crystallizing solutions.

Electrosprayed MnO2 on ZnO nanorods with atomic layer deposited TiO2 layer for photoelectrocatalytic water splitting

2020 ◽  
Vol 271 ◽  
pp. 118928 ◽  
Author(s):  
Min-Woo Kim ◽  
Bhavana Joshi ◽  
Edmund Samuel ◽  
Hyunjun Seok ◽  
Ali Aldalbahi ◽  
...  
Keyword(s):  
Water Splitting ◽  
Zno Nanorods ◽  
Atomic Layer ◽  
Tio2 Layer

In-situ observation of phase transformation in amorphous silicon during Joule-heating induced crystallization process

2011 ◽  
Vol 519 (16) ◽  
pp. 5516-5522 ◽  
Author(s):  
Dong-Hyun Kim ◽  
Won-Eui Hong ◽  
Jae-Sang Ro ◽  
Seong Hyuk Lee ◽  
Chang-Hoon Lee ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Amorphous Silicon ◽  
Joule Heating ◽  
Crystallization Process ◽  
In Situ Observation ◽  
Induced Crystallization

Grain Boundary Location-Controlled Polt-Si Films for Tft Devices Obtained Via Novel Excimer Laser Process

1994 ◽  
Vol 358 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Grain Boundary ◽  
Excimer Laser ◽  
Crystallization Process ◽  
Critical Distance ◽  
Capping Layer ◽  
Complete Melting ◽  
Boundary Location ◽  
Si Films ◽  
Active Channel ◽  
Induced Crystallization

ABSTRACTBased on a previously acquired physical understanding of the excimer-laser-induced crystallization process, we have developed a new crystallization technique that produces controlled microstructures and possesses a wide processing window. A patterned oxide capping layer was used as an antireflective coating to induce complete melting of an Si film under an SiO2 pattern, and partial melting of the Si film in the areas not under the capping layer—allowing controlled super lateral growth to proceed from the incompletely melted portion of the film to the completely melted portion. For the simple stripes used in this investigation, when the width of the completely molten region is less than a critical distance (above which nucleation of solids occurs in the middle of the completely melted regions), the resulting microstructure has large and elongated grains with one precisely located grain boundary running parallel to the stripe In the middle of the oxide capped region.Arrangement of TFT devices on the resulting Grain boundary Location-Controlled (GLC) Si films with one (or zero) grain boundaries located perpendicular to the flow of electrons within the active channel portion of the TFT devices is illustrated. Such devices are expected to possess performance and uniformity characteristics that are superior to currently available poly-Si TFT devices.

Laser spot size dependence of photo-induced crystallization process in amorphous GeSe2 film

1996 ◽  
Vol 198-200 ◽  
pp. 740-743 ◽  
Author(s):  
Mitsutaka Nakamura ◽  
Yong Wang ◽  
Osamu Matsuda ◽  
Koichi Inoue ◽  
Kazuo Murase
Keyword(s):  
Size Dependence ◽  
Crystallization Process ◽  
Spot Size ◽  
Laser Spot ◽  
Laser Spot Size ◽  
Induced Crystallization

Angular Distribution of Electrons Elastically Scattered from Copper Surfaces, Polished and Textured by Argon Flux

1992 ◽  
Vol 279 ◽  
Author(s):  
Isay L. Krainsky
Keyword(s):  
Crystallization Process ◽  
Angular Distributions ◽  
Textured Surface ◽  
Ion Sputtering ◽  
Polycrystalline Structure ◽  
Secondary Electrons ◽  
Copper Surfaces ◽  
Atomic Scattering ◽  
Primary Electrons ◽  
Induced Crystallization

ABSTRACTAngular distributions of the elastically scattered secondary electrons from two kinds of Cu surfaces, polished and textured by 2 keV Ar+ have been studied in the energy range from 50 eV to 2 keV. The results show that for the polished Cu surface the elastic scattering process is dominated by atomic scattering from single atoms (although, contributions from othei processes are also important). However when the textured surface was studied, new multiple peaks appeared on the angular distributions. Positions of these peaks for the various angles of incidence and primary energies indicate that their origin lies in the diffraction of the primary electrons on some kind of a polycrystalline structure. This structure is probably created by the process of recrystallization induced by ion sputtering similar to the sputtering induced crystallization process already known for some oxides and nonmetallic compounds.

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