Microstructural and ferroelectric properties of rare earth (Ce, Pr, and Tb)-doped Na 0.5 Bi 4.5 Ti 3 O 15 thin films

2015 ◽  
Vol 355 ◽  
pp. 1007-1012 ◽  
Author(s):  
Chinnambedu Murugesan Raghavan ◽  
Jin Won Kim ◽  
Tae Kwon Song ◽  
Sang Su Kim
2017 ◽  
Vol 67 (11) ◽  
pp. 1272-1278
Author(s):  
Min Hwan KWAK ◽  
Chinnambedu Murugesan RAGHAVAN ◽  
Sang Su KIM ◽  
Won-Jeong KIM*

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.


2006 ◽  
Vol 100 (1) ◽  
pp. 014106 ◽  
Author(s):  
Hiroshi Uchida ◽  
Risako Ueno ◽  
Hiroshi Funakubo ◽  
Seiichiro Koda

2009 ◽  
Vol 182 (10) ◽  
pp. 2620-2625 ◽  
Author(s):  
C. Ostos ◽  
M.L. Martínez-Sarrión ◽  
L. Mestres ◽  
E. Delgado ◽  
P. Prieto

2020 ◽  
Author(s):  
Elbruz Murat Baba ◽  
Jose Montero ◽  
Dmitrii Moldarev ◽  
Marcos V. Moro ◽  
Max Wolff ◽  
...  

<p>We report preferential orientation control in photochromic gadolinium oxyhydride (GdHO) thin films deposited by a two-step process. Gadolinium hydride (GdH<sub>2-x</sub>) films were grown by reactive magnetron sputtering, followed by oxidation in air. The preferential orientation, grain size, anion concentrations, and photochromic response of the films are strongly dependent on the deposition pressure. GdHO films show preferential orientation along the [100] direction and exhibit photochromism when synthesized at deposition pressures up to 5.8 Pa and. The photochromic contrast is larger than 20 % when the films are deposited below 2.8 Pa with 0.22 H<sub>2</sub>/Ar flow ratio. We argue that the degree of preferential orientation defines the oxygen concentration which is known to be a key parameter for photochromism in rare-earth oxyhydride thin films. The experimental observations described above are explained by the oxidation-induced decrease of the grain size as a result of the increase of the deposition pressure of the sputtering gas. </p>


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