The effects of grain boundary scattering on electrical resistivity of Ag/NiSi silicide films formed on silicon substrate at 500 °C by RTA
2014 ◽
Vol 310
◽
pp. 248-256
◽
2012 ◽
Vol 132
(2-3)
◽
pp. 421-430
◽
Keyword(s):
Keyword(s):
2007 ◽
Vol 201
(19-20)
◽
pp. 8377-8381
◽
Keyword(s):
Keyword(s):
Keyword(s):
1983 ◽
Vol 2
(7)
◽
pp. 360-362
◽
2020 ◽
Vol 8
(17)
◽
pp. 8455-8461
◽