Laser deposition of sulfonated phthalocyanines for gas sensors

2014 ◽  
Vol 302 ◽  
pp. 37-41 ◽  
Author(s):  
Premysl Fitl ◽  
Martin Vrnata ◽  
Dusan Kopecky ◽  
Jan Vlcek ◽  
Jitka Skodova ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Laser Deposition ◽  
Sulfonated Phthalocyanines

scholarly journals Highly Sensitive NH3 Sensors Using CVD and Epitaxial Graphene Functionalised with Vanadium(V) Oxide: A Comparative Study

Proceedings ◽  
2018 ◽  
Vol 2 (13) ◽  
pp. 854 ◽  
Author(s):  
Margus Kodu ◽  
Artjom Berholts ◽  
Tauno Kahro ◽  
Jens Eriksson ◽  
Rositsa Yakimova ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Pulsed Laser ◽  
Epitaxial Graphene ◽  
Laser Deposition ◽  
Relative Response ◽  
Highly Sensitive ◽  
Different Types ◽  
Response And Recovery ◽  
Chemiresistive Gas Sensors ◽  
Speed Response

Exceptionally sensitive and selective graphene-based chemiresistive gas sensors were produced as a result of graphene functionalisation with a sub-nanometer V2O5 layer by using the method of pulsed laser deposition. Two different types of graphene were used—epitaxial graphene on SiC and CVD graphene on Si/SiO2—and both showed remarkable enhancement of sensing properties in terms of response and recovery speed, response magnitude and selectiveness towards NH3 gas. The epitaxial graphene-based sensor was demonstrating the highest relative response towards ammonia amounting to 80% for 0.1 ppm NH3.

Indium and tin oxide multilayered thin films as gas sensors based on reactive pulsed laser deposition

2000 ◽  
Author(s):  
Veronica Marotta ◽  
Stefano Orlando ◽  
Giovanni P. Parisi ◽  
Anna Giardini-Guidoni
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Tin Oxide ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multilayered Thin Films

scholarly journals Laser Deposition of Tetrasulfonated Phthalocyanine Layers for Gas Sensors

2012 ◽  
Vol 02 (04) ◽  
pp. 84-88 ◽  
Author(s):  
Premysl Fitl ◽  
Martin Vrnata ◽  
Dusan Kopecky ◽  
Jan Vlcek ◽  
Jitka Skodova ◽  
...  
Keyword(s):  
Gas Sensors ◽  
Laser Deposition

A Simple and Effective Route to Annihilate Defects in Nanocrystalline SnO2 Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 1026 ◽  
Author(s):  
Zhiwen Chen ◽  
C. M. L. Wu ◽  
C. H. Shek ◽  
J. K. L. Lai ◽  
Z. Jiao ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Sno2 Thin Films

AbstractThe microstructural defects of nanocrystalline SnO2 thin films prepared by pulsed laser deposition have been investigated using transmission electron microscopy, high-resolution transmission electron microscopy and Raman spectroscopy. Defects inside nanocrystalline SnO2 thin films could be significantly reduced by annealing the SnO2 thin films at 300 °C for 2 h. High-resolution transmission electron microscopy showed that stacking faults and twins were annihilated upon annealing. In particular, the edges of the SnO2 nanoparticles demonstrated perfect lattices free of defects after annealing. Raman spectra also confirmed that annealing the specimen was almost defect-free. By using thermal annealing, defect-free nanocrystalline SnO2 thin films can be prepared in a simple and practical way, which holds promise for applications as transparent electrodes and solid-state gas sensors.

Pulsed laser deposition and dip-coating techniques in the fabrication of bismuth molybdate gas sensors

2006 ◽  
Vol 497 (1-2) ◽  
pp. 284-291 ◽  
Author(s):  
Minh Thang Le ◽  
M. Kovanda ◽  
V. Myslik ◽  
M. Vrnata ◽  
I. Van Driessche ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Dip Coating ◽  
Laser Deposition ◽  
Bismuth Molybdate

Preparation and Characterization of Thin Films by Pulsed Laser Deposition for NOx gas Sensor

2005 ◽  
Vol 900 ◽  
Author(s):  
Md. Mosharraf Hossain Bhuiyan ◽  
Tsuyoshi Ueda ◽  
Hiroshi Shinguu ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Interdigital Electrodes ◽  
Sensor Property ◽  
Substrate Temperatures ◽  
Nox Gas Sensor

ABSTRACTGas sensors based on WO3 thin films doped with platinum (Pt) or palladium (Pd) were prepared by KrF excimer pulsed laser deposition method combined with dc sputtering. The films were deposited on silicon, quartz and Al2O3 sensor substrate with Pt interdigital electrodes at various substrate temperatures from 300°C to 500 °C, and oxygen pressures from 100 mTorr to 300 m Torr, respectively during the deposition. The morphology and structure of the films were examined by AFM and XRD. The sensor property of the WO3−x thin films was measured by the two terminal resistance method at operating temperatures of 25 °C to 400 °C. The sensitivity of the WO3 thin film gas sensors with doping (platinum or palladium) was found to be higher than that of undoped WO3 thin films gas sensors. The sensitivity of the pt doped WO3 films to different concentration of NO gas was examined and the sensitivity was found to be increased with increasing NO gas concentration.

scholarly journals Selective detection of naphthalene with nanostructured WO<sub>3</sub> gas sensors prepared by pulsed laser deposition

2016 ◽  
Vol 5 (1) ◽  
pp. 147-156 ◽  
Author(s):  
Martin Leidinger ◽  
Joni Huotari ◽  
Tilman Sauerwald ◽  
Jyrki Lappalainen ◽  
Andreas Schütze
Keyword(s):  
Signal Processing ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Gas Sensors ◽  
Gas Sensing ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
Deposition Parameter

Abstract. Pulsed laser deposition (PLD) at room temperature with a nanosecond laser was used to prepare WO3 layers on both MEMS microheater platforms and Si/SiO2 substrates. Structural characterization showed that the layers are formed of nanoparticles and nanoparticle agglomerates. Two types of layers were prepared, one at an oxygen partial pressure of 0.08 mbar and one at 0.2 mbar. The layer structure and the related gas sensing properties were shown to be highly dependent on this deposition parameter. At an oxygen pressure of 0.2 mbar, formation of ε-phase WO3 was found, which is possibly contributing to the observed increase in sensitivity of the sensor material. The gas sensing performance of the two sensor layers prepared via PLD was tested for detection of volatile organic compounds (benzene, formaldehyde and naphthalene) at ppb level concentrations, with various ethanol backgrounds (0.5 and 2 ppm) and gas humidities (30, 50 and 70 % RH). The gas sensors were operated in temperature cycled operation. For signal processing, linear discriminant analysis was performed using features extracted from the conductance signals during temperature variations as input data. Both WO3 sensor layers showed high sensitivity and selectivity to naphthalene compared to the other target gases. Of the two layers, the one prepared at higher oxygen partial pressure showed higher sensitivity and stability resulting in better discrimination of the gases and of different naphthalene concentrations. Naphthalene at concentrations down to 1 ppb could be detected with high reliability, even in an ethanol background of up to 2 ppm. The sensors show only low response to ethanol, which can be compensated reliably during the signal processing. Quantification of ppb level naphthalene concentrations was also possible with a high success rate of more than 99 % as shown by leave-one-out cross validation.

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

Pulsed laser deposition of relaxor ferroelectric films

1998 ◽  
Vol 08 (PR9) ◽  
pp. Pr9-261-Pr9-264
Author(s):  
M. Tyunina ◽  
J. Levoska ◽  
A. Sternberg ◽  
V. Zauls ◽  
M. Kundzinsh ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Relaxor Ferroelectric ◽  
Laser Deposition ◽  
Ferroelectric Films
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