Double junction photoelectrochemical solar cells based on Cu2ZnSnS4/Cu2ZnSnSe4 thin film as composite photocathode

2014 ◽  
Vol 292 ◽  
pp. 55-62 ◽  
Author(s):  
L. Zhu ◽  
Y.H. Qiang ◽  
Y.L. Zhao ◽  
X.Q. Gu
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Photoelectrochemical Solar Cells ◽  
Double Junction

Porous copper zinc tin sulfide thin film as photocathode for double junction photoelectrochemical solar cells

2012 ◽  
Vol 48 (24) ◽  
pp. 3006 ◽  
Author(s):  
Pengcheng Dai ◽  
Guan Zhang ◽  
Yuncheng Chen ◽  
Hechun Jiang ◽  
Zhenyu Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Tin Sulfide ◽  
Copper Zinc Tin Sulfide ◽  
Porous Copper ◽  
Photoelectrochemical Solar Cells ◽  
Copper Zinc ◽  
Double Junction

Painted, Polycrystalline Thin Film Photoelectrodes for Photoelectrochemical Solar Cells

1980 ◽  
Vol 127 (10) ◽  
pp. 2252-2254 ◽  
Author(s):  
Gary Hodes ◽  
David Cahen ◽  
Joost Manassen ◽  
Monica David
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Polycrystalline Thin Film ◽  
Photoelectrochemical Solar Cells

scholarly journals Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Peyman Jelodarian ◽  
Abdolnabi Kosarian
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Current Density ◽  
Doping Concentration ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Maximum Efficiency ◽  
Junction Solar Cell ◽  
Double Junction

The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H) thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

Characteristics of InGaP/GaAs double junction thin film solar cells on a flexible metallic substrate

Solar Energy ◽  
2018 ◽  
Vol 174 ◽  
pp. 703-708 ◽  
Author(s):  
Bin Zhao ◽  
Xian-Sheng Tang ◽  
Wen-Xue Huo ◽  
Yang Jiang ◽  
Zi-Guang Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Metallic Substrate ◽  
Thin Film Solar Cells ◽  
Double Junction
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