Generation of cavities in silicon wafers by laser ablation using silicon nitride as sacrificial layer

2012 ◽  
Vol 258 (7) ◽  
pp. 2914-2919 ◽  
Author(s):  
B. Lerner ◽  
M.S. Perez ◽  
C. Toro ◽  
C. Lasorsa ◽  
C.A. Rinaldi ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Sacrificial Layer ◽  
Silicon Wafers

Thermal Modelling of Pulsed Laser Ablation of Silicon Nitride Ceramics

2019 ◽  
pp. 369-381
Author(s):  
Ntombikazi Jojo ◽  
Cebolenkosi Philani Ntuli ◽  
Lerato Cresilda Tshabalala ◽  
Sisa Pityana
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thermal Modelling ◽  
Nitride Ceramics

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

Analysis of silicon nitride bearings with laser ablation inductively coupled plasma mass spectrometry

1997 ◽  
Vol 355 (2-3) ◽  
pp. 113-119 ◽  
Author(s):  
Scott A Baker ◽  
Matthew J Dellavecchia ◽  
Benjamin W Smith ◽  
James D Winefordner
Keyword(s):  
Mass Spectrometry ◽  
Silicon Nitride ◽  
Laser Ablation ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled ◽  
Plasma Mass Spectrometry

Helium-3 activation analysis of oxygen in silicon nitride films on silicon wafers

1979 ◽  
Vol 52 (2) ◽  
pp. 449-459 ◽  
Author(s):  
T. Nozaki ◽  
M. Iwamoto ◽  
K. Usami ◽  
K. Mukai ◽  
A. Hiraiwa
Keyword(s):  
Silicon Nitride ◽  
Activation Analysis ◽  
Silicon Wafers ◽  
Silicon Nitride Films ◽  
Helium 3

Ultra-short pulsed laser ablation of silicon nitride layers: Investigation near threshold fluence

2013 ◽  
Vol 278 ◽  
pp. 265-267 ◽  
Author(s):  
Gerrit Heinrich ◽  
Markus Wollgarten ◽  
Mario Bähr ◽  
Alexander Lawerenz
Keyword(s):  
Silicon Nitride ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Threshold Fluence ◽  
Nitride Layers ◽  
Near Threshold

Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics

2013 ◽  
Vol 542 ◽  
pp. 420-425 ◽  
Author(s):  
J. Bonse ◽  
G. Mann ◽  
J. Krüger ◽  
M. Marcinkowski ◽  
M. Eberstein
Keyword(s):  
Silicon Nitride ◽  
Femtosecond Laser ◽  
Silicon Wafers ◽  
Nitride Layers
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