SHORT COMMUNICATION: Surface passivation by rehydrogenation of silicon-nitride-coated silicon wafers

2005 ◽  
Vol 13 (3) ◽  
pp. 195-200 ◽  
Author(s):  
Michelle McCann ◽  
Klaus Weber ◽  
Andrew Blakers
Keyword(s):  
Silicon Nitride ◽  
Short Communication ◽  
Surface Passivation ◽  
Silicon Wafers

Silicon-nitride surface passivation of submicrometer silicon waveguides for low-power optical switches

2009 ◽  
Vol 34 (10) ◽  
pp. 1534 ◽  
Author(s):  
Joris Van Campenhout ◽  
William M. J. Green ◽  
Xiaoping Liu ◽  
Solomon Assefa ◽  
Richard M. Osgood ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Low Power ◽  
Surface Passivation ◽  
Optical Switches ◽  
Silicon Waveguides

scholarly journals ECR Plasma Synthesis of Silicon Nitride Films ON GaAs and InSb

1993 ◽  
Vol 316 ◽  
Author(s):  
J. C. Barbour ◽  
M. L. Lovejoy ◽  
C. I. H. Ashby ◽  
A. J. Howard ◽  
J. S. Custer ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Surface Passivation ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
Fold Increase ◽  
Film Stress ◽  
Dielectric Films ◽  
Plasma Synthesis ◽  
Ecr Plasma ◽  
Composition Profiles

ABSTRACTThe growth of high-quality dielectric films from Electron Cyclotron Resonance (ECR) plasmas provides for low-temperature surface passivation of compound semiconductors. Silicon nitride (SiNx) films were grown at temperatures from 30°C to 250°C on GaAs substrates. The stress in the films was measured as a function of bias applied during growth (varied from 0 to 200 V), and as a function of sample annealing treatments. Composition profiles of the samples were measured using ion beam analysis. The GaAs photoluminescence (PL) signal after SiNx growth without an applied bias (ion energy = 30 eV) was twice as large as the PL signal from the cleaned GaAs substrate. The PL signal from samples biased at -50 and -100 V indicated that damage degraded the passivation quality, while atomic force microscopy of these samples showed a three fold increase in rms surface roughness relative to unbiased samples. The sample grown with a bias of-200 V showed the largest reduction in film stress but also the smallest PL signal.

Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells

2014 ◽  
Vol 104 (5) ◽  
pp. 053503 ◽  
Author(s):  
Vivek Sharma ◽  
Clarence Tracy ◽  
Dieter Schroder ◽  
Stanislau Herasimenka ◽  
William Dauksher ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Surface Passivation ◽  
Silicon Solar Cells ◽  
Silicon Nitride Films ◽  
Charge States

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang
Keyword(s):  
Silicon Nitride ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Silicon Wafers ◽  
Czochralski Silicon ◽  
Silicon Nitride Films ◽  
Oxygen Precipitation ◽  
Different Temperatures ◽  
Nitrogen Bonds ◽  
Sinx Film

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.

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