Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study

2011 ◽  
Vol 257 (23) ◽  
pp. 9785-9790 ◽  
Author(s):  
A. Siokou ◽  
F. Ravani ◽  
S. Karakalos ◽  
O. Frank ◽  
M. Kalbac ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Copper Substrate ◽  
Graphene Layers ◽  
Surface Refinement

scholarly journals Method for determining the adhesion force between graphene and copper

2019 ◽  
Vol 196 ◽  
pp. 00057
Author(s):  
Evgeny Victorovich Boyko ◽  
Ilya Alexeevich Kostogrud ◽  
Dmitry Vladimirovich Smovzh ◽  
Pavel Evgenyevich Matochkin
Keyword(s):  
Crystal Orientation ◽  
Adhesion Force ◽  
Electron Backscatter Diffraction ◽  
Copper Substrate ◽  
Qualitative Assessment ◽  
Multilayer Graphene ◽  
Graphene Layers ◽  
Electron Backscatter ◽  
Graphene Transfer ◽  
Backscatter Diffraction

The paper presents the technique of qualitative assessment of the strength of graphene layers adhesion to the surface of a copper substrate, where they are formed. The technique uses a complex of approved analytical methods: electron backscatter diffraction (EBSD), Raman spectroscopy and optical microscopy. The technique was tested on multilayer graphene grown on a copper grain with crystal orientation (111). The presented method can be used to assess the effectiveness of the methods of graphene transfer from grains with different crystal orientation.

Electronic properties of stacks of graphene layers

2007 ◽  
Vol 143 (1-2) ◽  
pp. 116-122 ◽  
Author(s):  
F. Guinea ◽  
A.H. Castro Neto ◽  
N.M.R. Peres
Keyword(s):  
Electronic Properties ◽  
Graphene Layers

Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

2020 ◽  
Vol 20 (12) ◽  
pp. 7698-7704
Author(s):  
K. Kavitha ◽  
Akanksha R. Urade ◽  
Gurjinder Kaur ◽  
Indranil Lahiri
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Graphene Layer ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Large Area ◽  
Chemical Vapor Deposition Growth ◽  
Graphene Layers ◽  
Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

scholarly journals CVD-Graphene-Based Flexible, Thermoelectrochromic Sensor

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
Adam Januszko ◽  
Agnieszka Iwan ◽  
Stanislaw Maleczek ◽  
Wojciech Przybyl ◽  
Iwona Pasternak ◽  
...  
Keyword(s):  
Graphene Layer ◽  
Flexible Substrate ◽  
Copper Substrate ◽  
Main Idea ◽  
Chemical Vapor ◽  
Scanning Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Mechanical Destruction ◽  
Graphene Layers ◽  
Energy Current

The main idea behind this work was demonstrated in a form of a new thermoelectrochromic sensor on a flexible substrate using graphene as an electrically reconfigurable thermal medium (TEChrom™). Our approach relies on electromodulation of thermal properties of graphene on poly(ethylene terephthalate) (PET) via mechanical destruction of a graphene layer. Graphene applied in this work was obtained by chemical vapor deposition (CVD) technique on copper substrate and characterized by Raman and scanning tunneling spectroscopy. Electrical parameters of graphene were evaluated by the van der Pauw method on the transferred graphene layers onto SiO2 substrates by electrochemical delamination method. Two configurations of architecture of sensors, without and with the thermochromic layer, were investigated, taking into account the increase of voltage from 0 to 50 V and were observed by thermographic camera to define heat energy. Current-voltage characteristics obtained for the sensor with damaged graphene layer are linear, and the resistivity is independent from the current applied. The device investigated under 1000 W/m2 exhibited rise of resistivity along with increased temperature. Flexible thermoelectrochromic device with graphene presented here can be widely used as a sensor for both the military and civil monitoring.

scholarly journals Atomic Level Insight into Wetting and Structure of Ag Droplet on Graphene Coated Copper Substrate—Molecular Dynamics versus Experiment

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1465
Author(s):  
Aleksandra Drewienkiewicz ◽  
Arkadiusz Żydek ◽  
Marcela E. Trybula ◽  
Janusz Pstruś
Keyword(s):  
Molecular Dynamics ◽  
Copper Substrate ◽  
Md Simulations ◽  
Atomic Level ◽  
Wetting Behavior ◽  
Graphene Layers ◽  
Metal Interactions ◽  
Metal Metal ◽  
Perfect Graphene ◽  
Pure Cu

Understanding the atomic-level phenomena occurring upon the wetting of graphene-coated Cu with liquid Ag is pivotal for the description of the wetting phenomenon and the role of graphene as a diffusion barrier. We have performed molecular dynamics (MD) simulations and confronted with our present experimental results to characterize wetting behavior of graphene coated Cu surfaces. Perfect and defected graphene layers covering Cu surface were wetted with liquid Ag droplet at 1273 K. Structural and topological aspects are discussed to characterize structure of the liquid Ag droplet and a product of wetting reaction occurring on Cu/Gn and Cu/Gndef substrates, also including perfect graphene layer and a pure Cu surface. The obtained results reveal the importance of defects in graphene structure, which play a key role in wetting mechanism and the formation of AgCu alloy. As a consequence, we observe a change of the wetting behavior and topology of both bulk and adsorbed Ag atoms by using Voronoi analysis (VA). Despite the differences in time scale, atomistic simulations allowed us to catch the early stages of wetting, which are important for explaining the final stage of wetting delivered from experiment. Our findings reveal also graphene translucency to metal-metal interactions, observed in previous papers.

scholarly journals Adiabatic versus Non-Adiabatic Electron Transfer at 2D Electrode Materials

2021 ◽  
Author(s):  
Dan-Qing Liu ◽  
Minkyung Kang ◽  
David Perry ◽  
Chang-Hui Chen ◽  
Geoff West ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Density Functional ◽  
Electrode Materials ◽  
Copper Substrate ◽  
Experimental Methodology ◽  
Diffusion Limit ◽  
Rate Theory ◽  
Multilayer Graphene ◽  
Contact Potential ◽  
Graphene Layers

<div><div><div><p>Outer-sphere electron transfer (OS-ET) is a cornerstone elementary electrochemical reaction, yet microscopic understanding is largely based on idealized theories, developed in isolation from experiments that themselves are often close to the kinetic (diffusion) limit. Focusing on graphene as-grown on a copper substrate as a model 2D material/metal-supported electrode system, this study resolves the key electronic interactions in OS-ET, and identifies the role of graphene in modulating the electronic properties of the electrode/electrolyte interface. An integrated experimental-theoretical approach combining co-located multi-microscopy, centered on scanning electrochemical cell microscopy (SECCM), with Raman microscopy and field emission-scanning electron microscopy, together with rate theory and density functional theory (DFT) calculations is used to address OS-ET kinetics of hexaamineruthenium (III/II) chloride, [Ru(NH3)6]3+/2+. The experimental methodology allows spatially-resolved electrochemical measurements to be targeted at distinct regions of monolayer, bilayer and multilayer graphene on copper, with high diffusion rates, to reveal ET kinetics in the order: monolayer > bilayer > multilayer. To rationalize these findings we extended the Schmickler-Newns-Anderson model Hamiltonian for electron transfer and parametrized it using constant potential DFT. Combining this model with rate theory reveals that the difference in kinetics at monolayer and bilayer graphene can be rationalized in the context of a dominantly adiabatic mechanism, where the addition of subsequent graphene layers increases the contact potential, producing an increase in the effective barrier to electron transfer. This study provides a roadmap for the integration of experiments, theory, and simulations in order to understand the nature of heterogeneous electron transfer at complex nanostructured electrode materials.</p></div></div></div>

Crystal Structure of L6, L4-8, L3-12 and L4-6-12 Graphene Polymorphs

2016 ◽  
Vol 845 ◽  
pp. 247-250
Author(s):  
A.E. Kochengin ◽  
Evgeniy A. Belenkov
Keyword(s):  
Crystal Structure ◽  
Density Functional Theory ◽  
Electronic Properties ◽  
Density Functional ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Graphene Layers

Calculations of the structure and electronic properties of crystals composed of graphene layers L6, L4-8, L3-12 and L4-6-12 were performed within the framework of density functional theory (DFT) with generalized gradient approximations (GGA). It was found out, that crystals of the four main types of graphene are to have metallic properties.

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