Influence of sputter-etching of substrate on the microstructural and optical properties of ZnO films deposited by RF magnetron sputtering

2011 ◽  
Vol 257 (14) ◽  
pp. 5998-6003 ◽  
Author(s):  
C.P. Li ◽  
B.H. Yang ◽  
X.C. Wang ◽  
F. Wang ◽  
M.J. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Sputter Etching

STUDY ON THE STRUCTURE AND OPTICAL PROPERTIES OF Zn1-xCrxO FILMS BY RF MAGNETRON SPUTTERING TECHNIQUE

2008 ◽  
Vol 22 (30) ◽  
pp. 5279-5287
Author(s):  
J. JU ◽  
X. M. WU ◽  
L. J. ZHUGE
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Crystal Lattice Parameter ◽  
Zno Films ◽  
Ultraviolet Region ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Cr Concentration

Zn 1-x Cr x O (x = 0, 0.03, 0.09) films were prepared by the radio frequency (RF) magnetron sputtering technique on Si (111) and quartz glass substrates. The effects of Cr -doping on the structural and optical properties of ZnO films have been discussed. The structural properties were investigated using X-ray diffraction (XRD) and scanning electron microscope (SEM) while optical properties using UV-Visible spectrophotometer (UV-VIS). XRD measurement revealed that the films were single phase and wurtzite structure with c-axis orientation. With the increase of Cr concentration, the intensity of the (002) peak and the grain size of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films decreased, and the Full Width at Half Maximum (FWHM) of (002) peak, the crystal lattice parameter c of Zn 1-x Cr x O (x = 0, 0.03, 0.09) films and the width of optical band gap increased, respectively. In the transmittance spectra of the Zn 1-x Cr x O (x = 0, 0.03, 0.09) films, the movement of the absorption edge of the ultraviolet region is the Burstein–Moss shift with the increase of Cr concentration.

Spectroscopic ellipsometric determination of optical properties of V-Al co-doped ZnO films by rf magnetron sputtering

2013 ◽  
Vol 30 (4) ◽  
pp. 221-227 ◽  
Author(s):  
A. Sayari ◽  
L. El Mir ◽  
S. Al-Heniti ◽  
E. Shalaan ◽  
S. J. Yaghmour ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

The Effect of Target to Substrate Distance on the Properties of HAZO Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 685 ◽  
pp. 134-140 ◽  
Author(s):  
Wei Ming Lu ◽  
Jun Zhang ◽  
Hong Wei Diao ◽  
Lei Zhao ◽  
Wen Jing Wang
Keyword(s):  
Residual Stress ◽  
Grain Size ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Systematic Study ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Electrical And Optical Properties ◽  
Substrate Distance ◽  
Doped Zno

Hydrogen doped AZO films (HAZO) were prepared by RF magnetron sputtering. A systematic study of the effect of substrate to target distance (Dst) on the structural, electrical and optical properties of the as-grown HAZO films was carried out. Compared with the Al-doped ZnO films, the hydrogen in the atmosphere influenced the growth of the films by incorporating in the films and bombarding the surface of the film, namely, the Dst, which induced the residual stress and the roughness of the films decreasedwith an increase of the Dst. The films showed a smaller grain size. The surfacework function of the films changed with the composition of the films, reaching a maximum at 7.5cm.

Influence of Sputtering Power on Structural and Optical Properties of ZnO Films Fabricated by RF Magnetron Sputtering

2014 ◽  
Vol 1053 ◽  
pp. 325-331
Author(s):  
Yang Zhou ◽  
Hong Fang Zheng ◽  
Guang Zhao ◽  
Man Li ◽  
Bao Ting Liu
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Axis Orientation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Light Region ◽  
Sputtering Power ◽  
Average Transmission

ZnO thin film has been fabricated on sapphire substrate (0001) using RF magnetron sputtering at room temperature. The influence of sputtering power ranging from 10 W to 70 W on the microstructural and optical properties of ZnO films is investigated by atomic force microscopy (AFM), X-ray diffraction (XRD), ultraviolet-visible spectrophotometer. The AFM results show that with the increase of sputtering power, the size of ZnO crystalline increases first, then decrease and the maximum grain size occurs at 50 W. The XRD measurements indicate that the ZnO films with wurtzite structure are highly c-axis orientation and the film fabricated at 50 W has the best crystalline quality. Optical transmission spectra of the ZnO samples demonstrate that the ZnO film obtained at 50 W has the higher average transmission (above 90%) in the visible-light region and its optical band gap is 3.26 eV.

Role of Sputtering Power on the Structural and Optical Properties of ZnO/SiO2 Films Deposited by Radio Frequency Magnetron Sputtering

2013 ◽  
Vol 760-762 ◽  
pp. 776-779
Author(s):  
Shuang Li ◽  
Ming Chen ◽  
Feng Xiang Wang
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Force Microscopy ◽  
Sputtering Power

In the present work, we investigated the effect of sputtering power on the structural and optical properties of ZnO films by radio frequency (rf) magnetron sputtering. Atom force microscopy (AFM), X-ray diffraction (XRD) and Prism coupling method were adopted to investigate the structure and optical properties of ZnO thin films deposited by sputtering powers in the range from 100~150W. XRD and AFM results shown that ZnO films with high c-axis preferred orientation crystalline structures have been successfully deposited under higher sputtering power condition. Moreover, it was also found that the indexes refractive of the films obtained by higher sputtering power are less than that of the bulk ZnO materials, which is closer to Crystal Refractive index.

Effects of Annealling Treatment on the Properties of TiO2/ZnO Thin Film Prepared by Simultaneous RF-Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 573-578
Author(s):  
Mohd Hanapiah Abdullah ◽  
Mohamad Hafiz Mamat ◽  
Mohammad Rusop Mahmood
Keyword(s):  
Optical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Nanocomposite Films ◽  
Crystalline Quality ◽  
Threshold Temperature ◽  
Zno Films ◽  
Key Factor ◽  
Uv Transmittance

In this work, TiO2/ZnO nanocomposite films were prepared by simultaneous RF-magnetron sputtering of ZnO and TiO2targets. The influences of annealing temperature on the properties of the TiO2/ZnO films were investigated. The crystal structure of the deposited TiO2/ZnO films was hexagonal wurtzite at (002) and (101) peaks and the films were highly oriented along the c-axis perpendicular to the substrate. The photoluminescence (PL) spectrum reveals the appearance of two emission peaks from the deposited film that are centred at 384 and 591 nm. The structural, electrical, and optical properties of TiO2/ZnO films were strongly dependent on the annealing temperature. With increasing of the annealing temperature, the optical properties (i.e., UV, transmittance, energy band-gap and crystalline quality) were also improved. However, when the annealing is relatively high (≥ 500° C), the intensity of the optical properties and crystalline quality slightly decreases. The annealing temperature of (≥ 500° C) becoming the threshold temperature limits for the TiO2/ZnO film. The results obtained herein suggest that selecting the appropriate annealing temperature become a key factor for tuning the most desired properties from the as-prepared TiO2/ZnO thin films.

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