The role of surface oxidation on luminescence degradation of porous silicon

2011 ◽  
Vol 257 (9) ◽  
pp. 4311-4316 ◽  
Author(s):  
Ersin Kayahan
Keyword(s):  
Porous Silicon ◽  
Surface Oxidation

scholarly journals Role of surface oxidation for thickness-driven insulator-to-metal transition in epitaxial MoO2 films

2018 ◽  
Vol 459 ◽  
pp. 92-97 ◽  
Author(s):  
Eunyoung Ahn ◽  
Taewon Min ◽  
Jaekwang Lee ◽  
Inwon Lee ◽  
Younghak Kim ◽  
...  
Keyword(s):  
Surface Oxidation

scholarly journals Porous Silicon Structural Evolution from In-Situ Luminescence and Raman Measurements

1996 ◽  
Vol 431 ◽  
Author(s):  
D. R. Tallant ◽  
M. J. Kelly ◽  
T. R. Guilinger ◽  
R. L. Simpson
Keyword(s):  
Porous Silicon ◽  
Silicon Surface ◽  
Structural Evolution ◽  
Surface Oxidation ◽  
Ethanol Solution ◽  
Nonradiative Recombination ◽  
Photoluminescence Intensity ◽  
Exciton Migration ◽  
Photoluminescence Mechanism

AbstractWe performed in-situ photoluminescence and Raman measurements on an anodized silicon surface in the HF/ethanol solution used for anodization. The porous silicon thereby produced, while resident in HF/ethanol, does not immediately exhibit intense photoluminescence. Intense photoluminescence develops spontaneously in HF/ethanol after 18–24 hours or with replacement of the HF/ethanol with water. These results support a quantum confinement mechanism in which exciton migration to traps and nonradiative recombination dominates the de-excitation pathways until silicon nanocrystals are physically separated and energetically decoupled by hydrofluoric acid etching or surface oxidation. The porous silicon surface, as produced by anodization, shows large differences in photoluminescence intensity and peak wavelength over millimeter distances. Parallel Raman measurements implicate nanometer-size silicon particles in the photoluminescence mechanism.

The Oxidation Behavior of Silicon Nanocrystals in the Submonolayer Region

1997 ◽  
Vol 486 ◽  
Author(s):  
J. Diener ◽  
M. Ben-Chorin ◽  
D. I. Kovalev ◽  
G. Polisski ◽  
F. Koch
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Porous Silicon ◽  
Silicon Nanocrystals ◽  
Oxidation Behavior ◽  
Surface Oxidation ◽  
Square Root ◽  
Mesoporous Silicon ◽  
Si Nanocrystals ◽  
Evolution Of Oxygen

AbstractFourier transform infrared spectroscopy is used to determine the time evolution of oxygen incorporation onto the surface of silicon nanocrystals. Oxygen concentrations up to one monolayer are investigated. The temporal progress of surface oxidation of Si nanocrystals in porous silicon shows a linear dependence on the square root of the oxidation time. This is similar to the oxidation of bulk Si and mesoporous silicon.

The role of surface oxidation on the degradation behavior of biodegradable Mg–RE (Gd, Y, Sc) alloys for resorbable implants

2014 ◽  
Vol 40 ◽  
pp. 407-417 ◽  
Author(s):  
Harpreet S. Brar ◽  
Ida S. Berglund ◽  
Josephine B. Allen ◽  
Michele V. Manuel
Keyword(s):  
Surface Oxidation ◽  
Degradation Behavior ◽  
Resorbable Implants

Role of microstructure and layer thickness in porous silicon conductometric gas sensors

2005 ◽  
Vol 202 (8) ◽  
pp. 1467-1471 ◽  
Author(s):  
Z. Gaburro ◽  
C. J. Oton ◽  
M. Ghulinyan ◽  
L. Pancheri ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Layer Thickness ◽  
Gas Sensors

scholarly journals Electronic States and Luminescence in Porous Silicon Quantum Dots: The Role of Oxygen

1999 ◽  
Vol 82 (1) ◽  
pp. 197-200 ◽  
Author(s):  
M. V. Wolkin ◽  
J. Jorne ◽  
P. M. Fauchet ◽  
G. Allan ◽  
C. Delerue
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Electronic States ◽  
Silicon Quantum Dots

The role of Cu ion activation and surface oxidation for polymorphic pyrrhotite flotation performance in Strathcona Mill

2019 ◽  
Vol 134 ◽  
pp. 87-96 ◽  
Author(s):  
Chao Qi ◽  
Jing Liu ◽  
Jonathan Malainey ◽  
Lori J. Kormos ◽  
Julie Coffin ◽  
...  
Keyword(s):  
Surface Oxidation ◽  
Ion Activation ◽  
Flotation Performance

Reversible quenching of photoluminescence in stain etched porous silicon at HNO 3 posttreatment and role of oxygen bonds

2018 ◽  
Vol 195 ◽  
pp. 49-53 ◽  
Author(s):  
Farhad A. Rustamov ◽  
Namiq H. Darvishov ◽  
Vidadi E. Bagiev ◽  
Mubariz Z. Mamedov ◽  
Goncha M. Eyvazova ◽  
...  
Keyword(s):  
Porous Silicon
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