Cross-sectional characterization of cupric oxide nanowires grown by thermal oxidation of copper foils

2010 ◽  
Vol 257 (1) ◽  
pp. 62-66 ◽  
Author(s):  
JianBo Liang ◽  
Naoki Kishi ◽  
Tetsuo Soga ◽  
Takashi Jimbo
Keyword(s):  
Thermal Oxidation ◽  
Cupric Oxide ◽  
Cross Sectional ◽  
Oxide Nanowires ◽  
Copper Foils

scholarly journals The Synthesis of Highly Aligned Cupric Oxide Nanowires by Heating Copper Foil

2011 ◽  
Vol 2011 ◽  
pp. 1-8 ◽  
Author(s):  
Jianbo Liang ◽  
Naoki Kishi ◽  
Tetsuo Soga ◽  
Takashi Jimbo
Keyword(s):  
Grain Size ◽  
Thermal Oxidation ◽  
Copper Foil ◽  
Smooth Surface ◽  
Cupric Oxide ◽  
The Other ◽  
Oxide Nanowires ◽  
Oxidation Method ◽  
Copper Foils ◽  
Grain Size And Orientation

We have investigated the effects of grain size and orientation of copper substrates for the growth of cupric oxide nanowires by thermal oxidation method. Long, less-roughness, high-density, and aligned cupric oxide nanowires have been synthesized by heating (200) oriented copper foils with small grain size in air gas. Long and aligned nanowires of diameter around 80 nm can only be formed within a short temperature range from 400 to 700°C. On the other hand, uniform, smooth-surface, and aligned nanowires were not formed in the case of larger crystallite size of copper foils with (111) and (200) orientation. Smaller grain size of copper foil with (200) orientation is favorable for the growth of highly aligned, smooth surface, and larger-diameter nanowires by thermal oxidation method.

scholarly journals Cupric oxide nanowires on three-dimensional copper foam for application in click reaction

RSC Advances ◽  
2017 ◽  
Vol 7 (16) ◽  
pp. 9567-9572 ◽  
Author(s):  
Chunxia Wang ◽  
Fan Yang ◽  
Yan Cao ◽  
Xing He ◽  
Yushu Tang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Heterogeneous Catalysts ◽  
Click Reaction ◽  
Cupric Oxide ◽  
Three Dimensional ◽  
Dipolar Cycloaddition ◽  
Oxide Nanowires ◽  
Copper Foam ◽  
Additional Support ◽  
Cu Foam

CuO nanowires can be synthesized by facile thermal oxidation of 3D Cu foam in air, which were found to be effective heterogeneous catalysts for the 1,3-dipolar cycloaddition reactions without using any additional support and bases.

scholarly journals Structural characterisation of copper oxide by X-ray diffraction

2021 ◽  
pp. 70-96
Author(s):  
Roberto LÓPEZ ◽  
◽  
Jesús NAMIGTLE ◽  
Jorge MASTACHE
Keyword(s):  
Copper Oxide ◽  
Thermal Oxidation ◽  
Crystal Size ◽  
Cupric Oxide ◽  
Texture Coefficient ◽  
Oxide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural Characterisation

In this work, the study of the structural characterization of copper oxide by the X-ray diffraction technique is presented. To obtain layers of copper oxide, sputtering and thermal oxidation techniques were combined. The average crystal size was calculated for the sputtered copper samples. For the copper oxide films obtained by thermal oxidation, both the crystal size and the texture coefficient were calculated. The crystalline quality was poor for layers obtained by sputtering. Thermal oxidation carried out on these films transformed its structure to the copper oxide phase known as cupric oxide.

Microstructural characterization of CoPtCr/Cr thin film disks by cross-section TEM and elongated probe micro-diffraction

1991 ◽  
Vol 49 ◽  
pp. 762-763
Author(s):  
M.A. Parker ◽  
K.E. Johnson ◽  
C. Hwang ◽  
A. Bermea
Keyword(s):  
Magnetic Recording ◽  
Electron Probe ◽  
Microstructural Characterization ◽  
Crystallographic Structure ◽  
Recording Media ◽  
Layer By Layer ◽  
Cross Sectional ◽  
New Techniques ◽  
Polished Side

We have reported the dependence of the magnetic and recording properties of CoPtCr recording media on the thickness of the Cr underlayer. It was inferred from XRD data that grain-to-grain epitaxy of the Cr with the CoPtCr was responsible for the interaction observed between these layers. However, no cross-sectional TEM (XTEM) work was performed to confirm this inference. In this paper, we report the application of new techniques for preparing XTEM specimens from actual magnetic recording disks, and for layer-by-layer micro-diffraction with an electron probe elongated parallel to the surface of the deposited structure which elucidate the effect of the crystallographic structure of the Cr on that of the CoPtCr.XTEM specimens were prepared from magnetic recording disks by modifying a technique used to prepare semiconductor specimens. After 3mm disks were prepared per the standard XTEM procedure, these disks were then lapped using a tripod polishing device. A grid with a single 1mmx2mm hole was then glued with M-bond 610 to the polished side of the disk.

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

Comparison of Ion-Milling Techniques For Cross-Sectional TEM of Semiconductors

1985 ◽  
Vol 43 ◽  
pp. 166-167
Author(s):  
Julia T. Luck ◽  
C. W. Boggs ◽  
S. J. Pennycook
Keyword(s):  
Analytical Techniques ◽  
Sample Surface ◽  
Ion Milling ◽  
Cross Sectional ◽  
Reliable Technique ◽  
Near Surface ◽  
Transmission Electron ◽  
Thin Region ◽  
Transient Thermal

The use of cross-sectional Transmission Electron Microscopy (TEM) has become invaluable for the characterization of the near-surface regions of semiconductors following ion-implantation and/or transient thermal processing. A fast and reliable technique is required which produces a large thin region while preserving the original sample surface. New analytical techniques, particularly the direct imaging of dopant distributions, also require good thickness uniformity. Two methods of ion milling are commonly used, and are compared below. The older method involves milling with a single gun from each side in turn, whereas a newer method uses two guns to mill from both sides simultaneously.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Genomic, Metagenomic and Transcriptomic Characterization of the Clinical Forms of COVID-19: A Comparative Cross-Sectional Study

2020 ◽  
Author(s):  
Christophe Rodriguez ◽  
Nicolas de Prost ◽  
Slim Fourati ◽  
Claudie Lamoureux ◽  
Guillaume Gricourt ◽  
...  
Keyword(s):  
Cross Sectional Study ◽  
Sectional Study ◽  
Cross Sectional ◽  
Clinical Forms
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