scholarly journals Massive transfer of vertically aligned Si nanowire array onto alien substrates and their characteristics

2009 ◽  
Vol 255 (20) ◽  
pp. 8566-8570 ◽  
Author(s):  
Shu-Chia Shiu ◽  
Shih-Che Hung ◽  
Jiun-Jie Chao ◽  
Ching-Fuh Lin
Keyword(s):  
Nanowire Array ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
Vertically Aligned

Fabrication and Field-Emission Properties of Vertically-Aligned Tapered [110]Si Nanowire Arrays Prepared by Nanosphere Lithography and Electroless Ag-Catalyzed Etching

NANO ◽  
2018 ◽  
Vol 13 (09) ◽  
pp. 1850108 ◽  
Author(s):  
Z. Feng ◽  
K. Q. Lin ◽  
Y. C. Chen ◽  
S. L. Cheng
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Room Temperature ◽  
Morphological Evolution ◽  
Nanowire Array ◽  
Nanosphere Lithography ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
Vertically Aligned

In this study, the controllable fabrication of a variety of vertically aligned, single-crystalline [110]-oriented Si nanowire arrays with sharp tips on (110)Si substrates is achieved using a combined self-assembled nanosphere lithography and multiple electroless Ag-catalyzed Si etching processes. All of the experiments were performed at room temperature. The morphological evolution and formation mechanism of long tapered [110]Si nanowire arrays during the multiple tip-sharpening cycle processes have been investigated by scanning electron microscopy, transmission electron microscopy and water contact angle measurements. Field emission measurements demonstrate that the field-emission behaviors of all nanowire samples produced in this study agree well with the Fowler–Nordheim theory, and the produced long tapered [110]Si nanowire array possesses superior electron emission characteristics, with a very low turn-on field of 1.4[Formula: see text]V/[Formula: see text]m and a high field enhancement factor of 3816. The simple and room temperature fabrication of the well-ordered long tapered [110]Si nanowire array and its excellent electron field emission performance suggest that it can serve as a good candidate for applications in high-performance Si-based vacuum electronic nanodevices.

Influence of Chemical Modification on the Electrical Properties of Si Nanowire Arrays

2010 ◽  
Vol 160-162 ◽  
pp. 1331-1335 ◽  
Author(s):  
Chuan Bo Li ◽  
Kristel Fobelets ◽  
S.N. Syed Jalal ◽  
Wei A. Ng ◽  
Zahid A.K. Durrani
Keyword(s):  
Electrical Conductivity ◽  
Electrical Property ◽  
Electrical Properties ◽  
Chemical Modification ◽  
Nanowire Array ◽  
Noise Measurement ◽  
Nanowire Arrays ◽  
Interface Traps ◽  
Si Nanowire ◽  
Si Nanowire Array

The influence of the chemical modification on the electrical property of Si nanowire array was studied. It is found that H-terminated Si nanowire has a better electrical conductivity while OH-passivation could increase their resistance. It is believed that the introducing of OH group on the surface nanowire increases the interface traps and it is confirmed by our 1/f noise measurement.

scholarly journals Electrical responses of dengue virus (DENV) using poly-Si nanowire array biosensor

2018 ◽  
Author(s):  
M. Nuzaihan M. N. ◽  
M. I. Mazlan ◽  
M. N. F. Zulkiffli ◽  
S. M. Hazri ◽  
M. F. M. Fathil ◽  
...  
Keyword(s):  
Dengue Virus ◽  
Nanowire Array ◽  
Si Nanowire ◽  
Array Biosensor ◽  
Si Nanowire Array ◽  
Electrical Responses

Construction of MoS2/Si nanowire array heterojunction for ultrahigh-sensitivity gas sensor

2017 ◽  
Vol 28 (43) ◽  
pp. 435503 ◽  
Author(s):  
Di Wu ◽  
Zhenhua Lou ◽  
Yuange Wang ◽  
Tingting Xu ◽  
Zhifeng Shi ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Nanowire Array ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
Ultrahigh Sensitivity

Reusable and long-life 3D Ag nanoparticles coated Si nanowire array as sensitive SERS substrate

2019 ◽  
Vol 494 ◽  
pp. 583-590 ◽  
Author(s):  
Jian Wu ◽  
Yongjun Du ◽  
Chunyan Wang ◽  
Shi Bai ◽  
Tian Zhang ◽  
...  
Keyword(s):  
Ag Nanoparticles ◽  
Nanowire Array ◽  
Sers Substrate ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
Long Life

Silicon nanowires-based fluorescent sensor for in situ detection of hydrogen sulfide in extracellular environment

RSC Advances ◽  
2015 ◽  
Vol 5 (81) ◽  
pp. 65905-65908 ◽  
Author(s):  
Huimin Wang ◽  
Lixuan Mu ◽  
Guangwei She ◽  
Wensheng Shi
Keyword(s):  
Hydrogen Sulfide ◽  
Silicon Nanowires ◽  
Fluorescent Sensor ◽  
Nanowire Array ◽  
Live Cells ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
In Situ Detection ◽  
Extracellular Environment

Based on a Si nanowire array, a fluorescent sensor for H2S was realized and successfully used for real time and in situ imaging of the changes in extracellular H2S of live cells.

scholarly journals Cyclic Voltammetry Peaks Due to Deep Level Traps in Si Nanowire Array Electrodes

2018 ◽  
Vol 17 (1) ◽  
pp. 154-160 ◽  
Author(s):  
Abdurrahman Shougee ◽  
Foivia Konstantinou ◽  
Tim Albrecht ◽  
Kristel Fobelets
Keyword(s):  
Cyclic Voltammetry ◽  
Deep Level ◽  
Nanowire Array ◽  
Si Nanowire ◽  
Si Nanowire Array
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