Influence of substrate temperature on the texture of barium ferrite film by magnetron sputtering

2009 ◽  
Vol 255 (8) ◽  
pp. 4443-4445 ◽  
Author(s):  
Zeyu Guo ◽  
Wanli Zhang ◽  
Hong Ji ◽  
Bin Peng ◽  
Wenxu Zhang
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Barium Ferrite ◽  
Ferrite Film ◽  
Influence Of Substrate ◽  
Barium Ferrite Film

scholarly journals Modifying the nanostructure and the mechanical properties of Mo2BC hard coatings: Influence of substrate temperature during magnetron sputtering

2018 ◽  
Vol 142 ◽  
pp. 203-211 ◽  
Author(s):  
Stephan Gleich ◽  
Rafael Soler ◽  
Hanna Fager ◽  
Hamid Bolvardi ◽  
Jan-Ole Achenbach ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Hard Coatings ◽  
Influence Of Substrate

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

2015 ◽  
Vol 7 (8) ◽  
pp. 1640-1648 ◽  
Author(s):  
P. Kondaiah ◽  
V. Madhavi ◽  
M. Chandra Sekhar ◽  
G. Mohan Rao ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Gate Dielectrics ◽  
Rf Magnetron Sputtering ◽  
Influence Of Substrate ◽  
Mos Gate
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