Growth of TiO2 Films by RF Magnetron Sputtering for MOS Gate Dielectrics: Influence of Substrate Temperature

2015 ◽  
Vol 7 (8) ◽  
pp. 1640-1648 ◽  
Author(s):  
P. Kondaiah ◽  
V. Madhavi ◽  
M. Chandra Sekhar ◽  
G. Mohan Rao ◽  
S. Uthanna
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Gate Dielectrics ◽  
Rf Magnetron Sputtering ◽  
Influence Of Substrate ◽  
Mos Gate

Influence of substrate temperature on N-doped ZnO films deposited by RF magnetron sputtering

2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Doped Zno ◽  
Influence Of Substrate

Influence of Substrate Temperature on Morphological and Electrical Properties of Indium Tin Oxide Nanocolumns Prepared by RF Magnetron Sputtering

2013 ◽  
Vol 832 ◽  
pp. 281-285
Author(s):  
S. Najwa ◽  
A. Shuhaimi ◽  
N. Ameera ◽  
K.M. Hakim ◽  
M. Sobri ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Rf Magnetron Sputtering ◽  
Morphological Properties ◽  
Average Roughness ◽  
Influence Of Substrate

Indium tin oxide was prepared using RF magnetron sputtering at different substrate temperature. The morphological and electrical properties were investigated. Morphological properties were observed by atomic force microscopy. Electrical properties were measured using standard two-point probe measurements. The result shows that the average roughness and peak to valley value are highest at high substrate temperature. The watershed analysis shows that the total grain boundaries are highest at the substrate temperature of 200°C. The lowest resistivity value of 9.57×10-5 Ωcm is obtained from ITO nanocolumn deposited at substrate temperature of 200°C. The improvement of morphological and electrical properties as transparent conducting oxide was observed from ITO nanocolumn deposited at substrate temperature of 200°C.

Influence of Substrate Temperature on the Al and Zr Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 814 ◽  
pp. 601-606 ◽  
Author(s):  
Fei Huan ◽  
Jin Feng Leng ◽  
Zhi Chao Meng ◽  
Bin Sun ◽  
Wen Shuang He
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Free Electrons ◽  
X Ray ◽  
Influence Of Substrate ◽  
Co Doped

ZnO doped Al2O3and ZrO2(ZAZO) thin films were deposited by the radio frequency magnetron sputtering on substrate temperature with 100°C, 150°C, 200°C, 250°C and 300°C. The surface morphology and electrical properties of the films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-probe tester. The results showed that the substrate temperature obviously influenced the grain size of ZAZO films. The ZnO thin film had the largest crystallization orientation for the (002) peak and the smallest FWHM value at substrate temperature of 250°C. As the temperature increasing, the resistance of films gradually decreased till reaching a minimum at 250°C and then rised. Due to the increasing of Al and Zr concentrations into ZnO lattice, the Al ions created an abundance number of free electrons in the ZnO lattice, and in turn, the electrical conductivity increased. In addition, the improvement of film in the crystalline state results in the film resistivity decreases.

THE INFLUENCE OF SUBSTRATE TEMPERATURE ON THE ELECTRICAL PROPERTIES OF ZnO FILMS PREPARED BY THE RF MAGNETRON SPUTTERING TECHNIQUE

NANO ◽  
2008 ◽  
Vol 03 (06) ◽  
pp. 469-476 ◽  
Author(s):  
K. SARAVANAKUMAR ◽  
V. SENTHILKUMAR ◽  
C. SANJEEVIRAJA ◽  
M. JAYACHANDRAN ◽  
V. GANESAN ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Uv Light ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Light Illumination ◽  
Influence Of Substrate ◽  
Substrate Temperatures

ZnO thin films were grown by the RF magnetron sputtering technique at different substrate temperatures, from RT to 300°C. The crystallite size was calculated from XRD and the grain size was measured from AFM for different substrate temperatures. The influence of the substrate temperature on the electrical properties of the films was investigated through the Hall effect, and conductivity studies were performed under UV light illumination. The conductivity and the carrier mobility of the films were found to increase with increasing substrate temperature, which can be due to the grain-boundary-dominated conduction mechanism. The thermal activation energy and photosensitivity of the films were calculated, and the results are presented in this paper.

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