Influence of oxygen plasma treatment on boron carbon nitride film composition

2009 ◽  
Vol 255 (6) ◽  
pp. 3635-3638 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Takuro Masuzumi ◽  
Daisuke Watanabe ◽  
M.K. Mazumder ◽  
Hiroshi Sota ◽  
...  
Author(s):  
Hidemitsu Aoki ◽  
Takuroh Masuzumi ◽  
Makoto Hara ◽  
Daisuke Watanabe ◽  
Chiharu Kimura ◽  
...  

2007 ◽  
Vol 16 (4-7) ◽  
pp. 1300-1303 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Hidekazu Shima ◽  
Chiharu Kimura ◽  
Takashi Sugino

2007 ◽  
Vol 254 (2) ◽  
pp. 596-599 ◽  
Author(s):  
Hidemitsu Aoki ◽  
Kazutoshi Ohyama ◽  
Hiroshi Sota ◽  
Toshiaki Seino ◽  
Chiharu Kimura ◽  
...  

2005 ◽  
Vol 14 (3-7) ◽  
pp. 719-723 ◽  
Author(s):  
Chiharu Kimura ◽  
Kunitaka Okada ◽  
Shingo Funakawa ◽  
Shinichiro Sakata ◽  
Takashi Sugino

2010 ◽  
Vol 49 (4) ◽  
pp. 04DB10
Author(s):  
Makoto Hara ◽  
Takuro Masuzumi ◽  
Zhiming Lu ◽  
Chiharu Kimura ◽  
Hidemitsu Aoki ◽  
...  

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.


AIChE Journal ◽  
2021 ◽  
Author(s):  
Jing Luo ◽  
Chao Wang ◽  
Jixing Liu ◽  
Yanchen Wei ◽  
Yanhong Chao ◽  
...  

Science ◽  
2021 ◽  
Vol 371 (6525) ◽  
pp. 138.6-139
Author(s):  
Phil Szuromi

Sign in / Sign up

Export Citation Format

Share Document