Deposition of aluminum nitride thin film on Si(111) by KrF excimer laser and its characterizations

2008 ◽  
Vol 254 (8) ◽  
pp. 2211-2215 ◽  
Author(s):  
Ming Chang Shih ◽  
Chi Wei Liang ◽  
Ping Ju Chaing
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Excimer Laser ◽  
Krf Excimer Laser

Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

2002 ◽  
Vol 407 (1-2) ◽  
pp. 126-131 ◽  
Author(s):  
Shin-ichi Aoqui ◽  
Hisatomo Miyata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Film ◽  
Boron Carbide ◽  
Excimer Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Krf Excimer Laser

Poly-Resistor Thin Film Formation by Excimer Laser Micromachine

2015 ◽  
Vol 780 ◽  
pp. 17-21
Author(s):  
A.F.M. Anuar ◽  
Yufridin Wahab ◽  
M.Z. Zainol ◽  
H. Fazmir ◽  
M. Najmi ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Laser Energy ◽  
Film Formation ◽  
Chemical Vapor ◽  
Laser Pulses ◽  
Beam Size ◽  
Silicon Thin Film ◽  
Pressure Chemical ◽  
Krf Excimer Laser

A simple theoretical model and resistor fabrication for calculating the resistance of a polycrystalline silicon thin film is presented. The resistance value for poly-resistor is perfomed in terms of polysilicon thickness and its total area. The KrF excimer laser micromachine is used in assisting the resistor formation for a low pressure chemical vapor deposition (LPCVD) based polysilicon. Laser micromachine with three main parameters is used to aid the fabrication of the poly-resistor; namely as the pulse rate (i.e. number of laser pulses per second), laser beam size and laser energy. These parameters have been investigated to create the isolation between materials and also to achieve the desired poly-resistor shape. Preliminary results show that the 35 um beam size and 15 mJ of energy level is the most effective parameter to produce the pattern. Poly-resistor formation with 12 and 21 number of squares shows the total average resistance of 303.52 Ω and 210.14 Ω respectively. The laser micromachine process also significantly reduce the total time and number of process steps that are required for resistor fabrication.

High-Concentration, Low-Temperature, and Low-Cost Excimer Laser Doping for 4H-SiC Power Device Fabrication

2019 ◽  
Vol 963 ◽  
pp. 403-406
Author(s):  
Kaname Imokawa ◽  
Toshifumi Kikuchi ◽  
Kento Okamoto ◽  
Daisuke Nakamura ◽  
Akihiro Ikeda ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Low Cost ◽  
Device Fabrication ◽  
Contact Resistivity ◽  
Power Devices ◽  
High Concentration ◽  
Laser Doping ◽  
Krf Excimer Laser ◽  
Al Thin Film

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of 4H-SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

Excimer Laser Direct Write Aluminum on Aluminum Nitride

1995 ◽  
Vol 390 ◽  
Author(s):  
Hua Li ◽  
Janet K. Lumpp
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Laser Energy ◽  
Laser Exposure ◽  
Direct Write ◽  
Electron Microscopies ◽  
Scan Speed ◽  
Krf Excimer Laser ◽  
Induced Decomposition ◽  
Made In

ABSTRACTFabrication of metal lines on aluminum nitride (AIN) ceramic is important for application of AIN as a microcircuit board. An Al line can be made directly from AIN by excimer laser exposure. All lines in this paper were written by pulsed KrF excimer laser (248 nm) in air and vacuum at different scan speeds with a constant laser energy. The morphology of the Al lines was observed by optical and scanning electron microscopies. The lines become more metallic when the scan speed decreases. Consequently the resistance, measured by the four-point probe technique, decreased to a minimum value in the scan speed range of 400 μm/s to 900 μm/s for the samples made in air. The resistance of Al lines written in air is greater than that in vacuum because of oxidation. The samples made in air with scan speed lower than 400 μm/s were heavily oxidized. SAXPS spectra showed a strong oxidation state and that the excimer laser exposure depletes nitrogen from AMN. The Al lines produced by laser-induced decomposition of AMN board are being evaluated as catalysts for laser assisted CVD and conventional electroless plating. The oxidation layer on the surface of Al lines may effect the adhesion between the Al lines and the deposited or plated metal.

Krf Excimer Laser Deposition of Titanium from Tici4

1989 ◽  
Vol 158 ◽  
Author(s):  
R. Izquierdo ◽  
C. Lavoie ◽  
M. Meunier
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Optical Waveguides ◽  
Film Growth ◽  
Adsorbed Layer ◽  
Primary Source ◽  
Thin Film Growth ◽  
Laser Deposition ◽  
Krf Excimer Laser

ABSTRACTWe have investigated the deposition of titanium lines from TiCl4 induced by KrF excimer laser (248 nm). Substrates are primarily LiNbO3, for the possible formation of Ti:LiNbO3 optical waveguides, as well as silicon and glass. Titanium lines contain [Cl] < 2 at% and are typically 200 to 1000 Angstroms thick with a width ranging from 3 to 20 μm. Results suggest that the process is controlled by photochemistry of TiCl4 but it is difficult at this point to assert which of the gas or adsorbed layer is the primary source of thin film growth.

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

2017 ◽  
Vol 110 (13) ◽  
pp. 133503 ◽  
Author(s):  
Juan Paolo S. Bermundo ◽  
Yasuaki Ishikawa ◽  
Mami N. Fujii ◽  
Hiroshi Ikenoue ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
High Mobility ◽  
Excimer Laser Annealing ◽  
Krf Excimer Laser
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