Photoluminescence properties of nitrogen-doped ZnO films deposited on ZnO single crystal substrates by the plasma-assisted reactive evaporation method

2007 ◽  
Vol 254 (1) ◽  
pp. 164-166 ◽  
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A. Nakagawa ◽  
F. Masuoka ◽  
S. Chiba ◽  
H. Endo ◽  
K. Megro ◽  
...  
2017 ◽  
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Author(s):  
Kun Tang ◽  
Shunming Zhu ◽  
Zhonghua Xu ◽  
Yang Shen ◽  
Jiandong Ye ◽  
...  
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2017 ◽  
Vol 696 ◽  
pp. 590-594 ◽  
Author(s):  
Kun Tang ◽  
Shunming Zhu ◽  
Zhonghua Xu ◽  
Jiandong Ye ◽  
Shulin Gu

2018 ◽  
Vol 47 (9) ◽  
pp. 5607-5613 ◽  
Author(s):  
Zi-Neng Ng ◽  
Kah-Yoong Chan ◽  
Shahruddin Muslimin ◽  
Dietmar Knipp
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2011 ◽  
Vol 109 (9) ◽  
pp. 093518 ◽  
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W. W. Liu ◽  
B. Yao ◽  
Z. Z. Zhang ◽  
Y. F. Li ◽  
B. H. Li ◽  
...  

2015 ◽  
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Qichang Hu ◽  
Yafeng Li ◽  
Feng Huang ◽  
Zhaojun Zhang ◽  
Kai Ding ◽  
...  

2015 ◽  
Vol 64 (8) ◽  
pp. 087803
Author(s):  
Zhou Xiao-Hong ◽  
Yang Qing ◽  
Zou Jun-Tao ◽  
Liang Shu-Hua

2018 ◽  
Vol 15 (3) ◽  
pp. 218-223 ◽  
Author(s):  
T. Sreenivasulu Reddy ◽  
G. Phaneendra Reddy ◽  
K.T. Ramakrishna Reddy

Spray deposited Mo-doped zinc oxide (MZO) films were grown on glass substrates at different substrate temperatures (Ts)that varied in the range of 300°C-450 °C at aconstant Mo-doping concentration of 2 at. %.XRD spectra revealed better crystallinity of films prepared atTs400 °C. FTIR spectra showed the vibrational modes related toZn–O bonding.Photoluminescence spectra of MZO films showed a peakrelated toviolet emissionsbetween 400 nm and 420 nm. Electrical analysis showed n type semiconducting nature of the films and the films grown at Ts= 400 °C hadlow resistivity and high mobility.Adetailed analysis on theeffect of substrate temperatureon photoluminescence and electrical propertiesof MZO films wasdiscussed and reported.


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