Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

2007 ◽  
Vol 253 (11) ◽  
pp. 5129-5132 ◽  
Author(s):  
Pallab Banerji
Keyword(s):  
Porous Silicon ◽  
Positron Annihilation ◽  
Low Temperatures ◽  
High Vacuum ◽  
Microstructure Characterization

Microstructure characterization of rapidly solidified Al–Fe–Cr–Ce alloy by positron annihilation spectroscopy

2011 ◽  
Vol 509 (7) ◽  
pp. 3211-3218 ◽  
Author(s):  
Alena Michalcová ◽  
Dalibor Vojtěch ◽  
Jakub Čížek ◽  
Ivan Procházka ◽  
Jan Drahokoupil ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Microstructure Characterization ◽  
Rapidly Solidified

scholarly journals Characterization of porous silicon by positron annihilation

1993 ◽  
Vol 03 (C4) ◽  
pp. 193-195 ◽  
Author(s):  
Y. ITOH ◽  
H. MURAKAMI ◽  
A. KINOSHITA
Keyword(s):  
Porous Silicon ◽  
Positron Annihilation

Preparation and Characterization of Ag Nanoparticles on Porous Silicon for Photo Conversion

2019 ◽  
Vol 50 (3) ◽  
pp. 82-95
Author(s):  
RAFID SABBAR ZAMEL ◽  
BAN KHALID MOHAMMED ◽  
ALAULDEEN SALAH YASEEN ◽  
HAITHAM T. HUSSEIN ◽  
UDAY MUHSIN NAYEF
Keyword(s):  
Porous Silicon ◽  
Ag Nanoparticles

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

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