Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells

2006 ◽  
Vol 253 (1) ◽  
pp. 80-84 ◽  
Author(s):  
R. Kudrawiec ◽  
J. Misiewicz
2014 ◽  
Vol 1040 ◽  
pp. 34-38
Author(s):  
A.V. Voitsekhovskii ◽  
D.I. Gorn

Description of theoretical model for energy-band spectrum calculation for the heteroepitaxial CdHgTe (MCT) structures grown by molecular-beam epitaxy (MBE) method with the single quantum wells (QW) is presented in this work. This computation model allows to calculate different electro-physical properties of this structures and allows to explain features of their C-V and G-V characteristics in the wide temperature range, i.e. from “helium” till room temperatures. This scientific work was carried out in the network of Tomsk State University Competitiveness Improvement Program.


1986 ◽  
Vol 2 (6) ◽  
pp. 569-573 ◽  
Author(s):  
A. Kangarlu ◽  
H.R. Chandrasekhar ◽  
M. Chandrasekhar ◽  
F.A. Chambers ◽  
B.A. Vojak ◽  
...  

2005 ◽  
Vol 86 (14) ◽  
pp. 141908 ◽  
Author(s):  
R. Kudrawiec ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  

1989 ◽  
Vol 40 (17) ◽  
pp. 11772-11777 ◽  
Author(s):  
Yasuaki Masumoto ◽  
Yasushi Kinoshita ◽  
Osamu Shimomura ◽  
Kenichi Takemura

1994 ◽  
Vol 64 (17) ◽  
pp. 2267-2269 ◽  
Author(s):  
S. J. Hwang ◽  
W. Shan ◽  
J. J. Song ◽  
Z. Q. Zhu ◽  
T. Yao

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