Influence of negative ion element impurities on laser induced damage threshold of HfO2 thin film

2006 ◽  
Vol 253 (3) ◽  
pp. 1111-1115 ◽  
Author(s):  
ShiGang Wu ◽  
GuangLei Tian ◽  
ZhiLin Xia ◽  
JianDa Shao ◽  
ZhengXiu Fan
2014 ◽  
Vol 129 (12) ◽  
Author(s):  
Masoume Sahraee ◽  
Hamid Reza Fallah ◽  
Badri Moradi ◽  
Hosein Zabolian ◽  
Morteza Haji Mahmoodzade

1999 ◽  
Author(s):  
Feng Huang ◽  
Qihong Lou ◽  
Hongyi Gao ◽  
Jinxing Dong ◽  
Yunrong Wei

1989 ◽  
Vol 7 (3) ◽  
pp. 433-441 ◽  
Author(s):  
Arthur H. Guenther ◽  
John K. McIver

Pulsed laser induced damage of optical thin films is, in general, initiated by the absorption of laser radiation by imperfections in the films or at interfaces between film layers and/or the substrate. A heat flow analysis of this process stresses the importance that the thermal conductivity of both the thin film host and that of the substrate play in establishing the laser-induced damage threshold. Unfortunately, recent work, which will be reviewed in this presentation, indicates that the thermal conductivity of thin films can be several orders of magnitude lower than that of the corresponding material in bulk form. This situation arises as a consequence of the film structure resulting principally from the deposition process. The importance of thermal conductivity will be compared to parameters such as absorption mechanisms, film materials, composition, and other variables. Its implication for the ultimate optical strength of materials and the direction in which thin film research and processing should proceed will be highlighted.


2015 ◽  
Vol 645-646 ◽  
pp. 381-387
Author(s):  
Xiu Hua Fu ◽  
Yong Gang Pan ◽  
Dong Mei Liu ◽  
Jing Zhang ◽  
Xiao Juan Wang

Based on the design theory of film stack,H4 and SiO2 were selected as the high and low refractive index materials respectively. Through optimization by Macleod and TFCalc software, plus considering the internal electric field intensity distribution of film and laser induced damage threshold as well,the beam-splitting film with Tp=65±5% and Ts=30±5% in the 600-700 band in condition of 45 °± 3 ° incident angle has been achieved. Adopting electron beam ion assisted deposition system to development, the deposition parameters of materials has been optimized via orthogonal matrix experiment. The fabrication of thin film for laser polarization beam splitter has been succeeded. Its optical properties, mechanical properties and resistance to environmental test of the film have been approved to meet all using requirements.


Sign in / Sign up

Export Citation Format

Share Document