Chemically abrupt interface between Ce oxide and Fe films

2005 ◽  
Vol 252 (5) ◽  
pp. 1202-1205 ◽  
Author(s):  
H.G. Lee ◽  
D. Lee ◽  
S. Kim ◽  
S.G. Kim ◽  
Chanyong Hwang
Keyword(s):  
Abrupt Interface

Combinatorial Synthesis Approach for Optimizing Oxide/Si Interfaces for the Future Ulsi

2001 ◽  
Vol 700 ◽  
Author(s):  
T. Chikyow ◽  
P. Ahmet ◽  
T. Naruke ◽  
K. Nakajima ◽  
N. Okazaki ◽  
...  
Keyword(s):  
Dielectric Property ◽  
Growth Parameters ◽  
Heating System ◽  
High Resolution Electron Microscopy ◽  
Material Synthesis ◽  
Amorphous Oxide ◽  
Intermediate Layers ◽  
Resolution Electron ◽  
Abrupt Interface ◽  
Interface Structures

AbstractA combinatorial material synthesis with temperature gradient heating system was employed to optimizing growth parameters for oxide growth on Si substrate. From the obtained results, it was found the dielectric property depends on the growth temperature as well as the composition. The interface structures were investigated by high resolution electron microscopy with a series of specimens fabricated by micro sampling method. The results showed that amorphous oxide region and SiO2 layer were formed at the interface. It was speculated that the amorphous oxide region contributed to the reduction of the dielectric property. To avoid the amorphous and SiO2 formation at the oxide/Si interface, a few kinds of intermediate layers were inserted and tested to find the possibility of abrupt interface formation.

scholarly journals N 2 Electroreduction to NH 3 by Selenium Vacancy‐Rich ReSe 2 Catalysis at an Abrupt Interface

2020 ◽  
Vol 132 (32) ◽  
pp. 13422-13429 ◽  
Author(s):  
Feili Lai ◽  
Wei Zong ◽  
Guanjie He ◽  
Yang Xu ◽  
Haowei Huang ◽  
...  
Keyword(s):  
Abrupt Interface

XPS Study of the Al/SiO2 Interface Viewed From the SiO2 Side

1983 ◽  
Vol 25 ◽  
Author(s):  
M.H. Hecht ◽  
F.J. Grunthaner ◽  
J. Maserjian
Keyword(s):  
Si Substrate ◽  
Electrical Measurements ◽  
Metal Insulator ◽  
New Approach ◽  
Aluminum Films ◽  
X Ray ◽  
Abrupt Interface ◽  
Xps Study ◽  
Destructive Measurement ◽  
Non Destructive

ABSTRACTWe report on the first non-destructive measurement of the chemical and physical characteristics of the interface between bulk SiO2 and thick aluminum films. Both X-Ray Photoelectron Spictroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO2 indicate an atomically abrupt interface. Post metallization annealing (PMA) at 450°C induces reduction of the SiO2 by the aluminum, resulting in the layer ordering SiO2/Al2O3/Si/Al. The XPS measurement is performed from the SiO2 side after the removal of the Si substrate after etching with XeF2 gas and thinning of the SiO2 layer with HF:ETOH. This represents a powerful new approach to the study of metal-insulator and other interfaces.

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Growth of (0001) AlN Single Crystals Using Carbon-Face SiC as Seeds

2013 ◽  
Vol 740-742 ◽  
pp. 99-102 ◽  
Author(s):  
Rajappan Radhakrishnan Sumathi ◽  
Matthias Paun
Keyword(s):  
Single Crystals ◽  
Spiral Growth ◽  
Misfit Dislocations ◽  
Experimental Conditions ◽  
Bottom Part ◽  
Misfit Stress ◽  
Rocking Curve ◽  
Epma Analysis ◽  
Growth Method ◽  
Abrupt Interface

Growth of AlN single crystals using carbon-polar surface of SiC substrate by PVT growth method has been attempted. AlN growth on the carbon-face was dominated by spiral growth mode under the applied experimental conditions and further, an abrupt interface was observed between AlN layer and the substrate. Broad XRD rocking curve of the sample, taken from bottom part of the crystal, indicates a high density of misfit dislocations near the interface and further a shift of E2(high) phonon mode in the Raman measurements shows a significant misfit stress. The XRD-RC FWHM values of symmetric 002 and asymmetric 102 reflections (top part of the crystal) are 380 and 300 arcsec respectively, whereas the Raman E2(high) peak FWHM value is about 23 cm-1. Decreasing intensity of silicon and carbon LVM peaks with increasing distance from the interface represents the reduction of their incorporation along the crystal length. EPMA analysis confirms the presence of low silicon concentration of 2 wt% in these crystals grown hetero-epitaxially on SiC.

High Quality Uniform SiC Epitaxy for Power Device Applications

2007 ◽  
Vol 556-557 ◽  
pp. 101-104
Author(s):  
Jie Zhang ◽  
Esteban Romano ◽  
Janice Mazzola ◽  
Swapna G. Sunkari ◽  
Carl Hoff ◽  
...  
Keyword(s):  
Growth Conditions ◽  
Average Deviation ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Device Applications ◽  
Abrupt Interface ◽  
P Type ◽  
Highly Uniform ◽  
Controlled Doping ◽  
Better Than

In this paper we present highly uniform SiC epitaxy in a horizontal hot-wall CVD reactor with wafer rotation. Epilayers with excellent thickness uniformity of better than 1% and doping uniformity better than 5% are obtained on 3-in, 4° off-axis substrates. The same growth conditions for uniform epitaxy also generate smooth surface morphology for the 4° epiwafers. Well controlled doping for both n- and p-type epilayers is obtained. Abrupt interface transition between n- and pdoped layers in a wide doping range is demonstrated. Tight process control for both thickness and doping is evidenced by the data collected from the epi operations. The average deviation from target is 2.5% for thickness and 6% for doping. PiN diodes fabricated on a standard 3-in, 4° epiwafer have shown impressive performance. More than half of the 1 mm2 devices block 1 kV (2.3 MV/cm) with a low leakage current of 1 μA.

Microstructure and interdiffusion behaviour of β-FeSi2 flat islands grown on Si(111) surfaces

2013 ◽  
Vol 46 (4) ◽  
pp. 1076-1080
Author(s):  
Sung-Pyo Cho ◽  
Yoshiaki Nakamura ◽  
Jun Yamasaki ◽  
Eiji Okunishi ◽  
Masakazu Ichikawa ◽  
...  
Keyword(s):  
Scanning Transmission Electron Microscopy ◽  
Single Phase ◽  
Spherical Aberration ◽  
Dark Field ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Abrupt Interface ◽  
Average Size ◽  
20 Nm

β-FeSi2 flat islands have been fabricated on ultra-thin oxidized Si(111) surfaces by Fe deposition on Si nanodots. The microstructure and interdiffusion behaviour of the β-FeSi2/Si(111) system at the atomic level were studied by using spherical aberration-corrected high-angle annular dark-field scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. The formed β-FeSi2 flat islands had a disc shape with an average size of 30–150 nm width and 10–20 nm height, and were epitaxically grown on high-quality single-phase Si with a crystallographic relationship (110)β-FeSi2/(111)Si and [001]β-FeSi2/[1\bar 10]Si. Moreover, the heterojunction between the β-FeSi2(110) flat islands and the Si(111) substrate was an atomically and chemically abrupt interface without any irregularities. It is believed that these results are caused by the use of ultra-thin SiO2 films in our fabrication method, which is likely to be beneficial particularly for fabricating practical nanoscaled devices.

High electron mobility in strained Si channel of heterostructure with abrupt interface

1998 ◽  
Vol 13 (8A) ◽  
pp. A140-A142 ◽  
Author(s):  
N Sugii ◽  
K Nakagawa ◽  
Y Kimura ◽  
S Yamaguchi ◽  
M Miyao
Keyword(s):  
Electron Mobility ◽  
High Electron ◽  
Strained Si ◽  
High Electron Mobility ◽  
Abrupt Interface
Sign in / Sign up

Export Citation Format

Share Document