Formation of Ge self-assembled quantum dots on a SixGe1−x buffer layer

2005 ◽  
Vol 252 (5) ◽  
pp. 1476-1480 ◽  
Author(s):  
Hyungjun Kim ◽  
Chansun Shin ◽  
Joonyeon Chang
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Self Assembled

Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer

2005 ◽  
Vol 26 (1-4) ◽  
pp. 276-280 ◽  
Author(s):  
E.T. Cho ◽  
H.D. Lee ◽  
D.W. Lee ◽  
J.I. Lee ◽  
S.I. Jung ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Gaas Buffer Layer ◽  
Self Assembled

High-Density ZnSe Self-Assembled Quantum Dots Grown on ZnS∕GaAs with Special ZnS Buffer Layer

2006 ◽  
Vol 153 (8) ◽  
pp. G778
Author(s):  
Ming-Kwei Lee ◽  
Tsung-Hsiang Shih ◽  
Chaur-Ching Lan
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
High Density ◽  
Self Assembled

Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

2002 ◽  
Vol 242 (3-4) ◽  
pp. 533-537 ◽  
Author(s):  
M.C Kuo ◽  
C.S Yang ◽  
P.Y Tseng ◽  
J Lee ◽  
J.L Shen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Self Assembled

TUNING OF EMISSION WAVELENGTH OF InAs/GaAs QUANTUM DOTS SANDWICHED BY COMBINATION LAYERS

2006 ◽  
Vol 05 (06) ◽  
pp. 847-852
Author(s):  
ZHIDAN FANG ◽  
ZHENG GONG ◽  
ZHENHUA MIAO ◽  
ZHICHUAN NIU
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Buffer Layer ◽  
Peak Position ◽  
Emission Peak ◽  
Emission Wavelength ◽  
Light Sources ◽  
Self Assembled

We investigate about controlling of photoluminescence (PL) wavelengths of InAs/GaAs self-assembled quantum dots (QDs) sandwiched with combination strained-buffer layer (CSBL) and combination strained-reducing layer (CSRL). The emission peak position of QDs is red-shifted to 1.37 μm. The density of the QDs is increased to 1.17 × 1010 cm -2. It is indicated that optical properties of QDs could be improved by optimizing of the buffer and covering layers for the QDs. These results may provide a new way to further developing GaAs -based 1.3 μm light sources.

scholarly journals Effect of the GaAs/GaSb combination strain-buffer layer on self-assembled InAs quantum dots

2009 ◽  
Vol 58 (1) ◽  
pp. 471
Author(s):  
Jiang Zhong-Wei ◽  
Wang Wen-Xin ◽  
Gao Han-Chao ◽  
Li Hui ◽  
He Tao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Inas Quantum Dots ◽  
Self Assembled

scholarly journals Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

2006 ◽  
Vol 293 (2) ◽  
pp. 263-268 ◽  
Author(s):  
I. Alghoraibi ◽  
T. Rohel ◽  
N. Bertru ◽  
A. Le Corre ◽  
A. Létoublon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Buffer Layer ◽  
Inas Quantum Dots ◽  
Self Assembled

Magnetotunneling spectroscopy imaging of electron wave functions in self-assembled InAs quantum dots

2001 ◽  
Vol 171 (12) ◽  
pp. 1365
Author(s):  
E.E. Vdovin ◽  
Yu.N. Khanin ◽  
Yu.V. Dubrovskii ◽  
A. Veretennikov ◽  
A. Levin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Wave Functions ◽  
Electron Wave ◽  
Inas Quantum Dots ◽  
Self Assembled
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