Morphology development and oriented growth of single crystalline ZnO nanorod

2005 ◽  
Vol 252 (5) ◽  
pp. 1436-1441 ◽  
Author(s):  
Lili Wu ◽  
Youshi Wu ◽  
Wei Lü ◽  
Huiying Wei ◽  
Yuanchang Shi
1997 ◽  
Vol 482 ◽  
Author(s):  
Yun-Xin Li ◽  
L. Salamanca-Riba ◽  
K. Wongchotigul ◽  
P. Zhou ◽  
M. G. Spencer ◽  
...  

AbstractAIN films grown on sapphire by MOCVD with different V/IAR ratios were investigated by XRD, TEM and AFM. The AIN films show single crystalline character as well as columnar structure. The growth of AIN has three zones: (1) high-density nucleation layer (2) fine columnar growth and (3) grain merging and lateral growth. The films grown at intermediate V/III ratio have the maximum value of [0002] FWHM. When the V/HI ratio increases, the thickness of the nucleation zone and the film misorientation increase, but when the ratio is increased further, the nucleation zone decreases and the AIN film has a more highly oriented growth. These results suggest that the AIN films with optimum crystalline quality can be obtained by varying the V/III ratio during growth.


2009 ◽  
Vol 113 (12) ◽  
pp. 4758-4762 ◽  
Author(s):  
Emiko Kazuma ◽  
Kazuki Matsubara ◽  
K. Lance Kelly ◽  
Nobuyuki Sakai ◽  
Tetsu Tatsuma

ChemPhysChem ◽  
2007 ◽  
Vol 8 (2) ◽  
pp. 235-240 ◽  
Author(s):  
Ju Xu ◽  
Nikolay Petkov ◽  
Xueyan Wu ◽  
Daniela Iacopino ◽  
Aidan J. Quinn ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-14 ◽  
Author(s):  
A. Peić ◽  
T. Dimopoulos ◽  
R. Resel ◽  
S. Abermann ◽  
M. Postl ◽  
...  

We present a single step and an electrochemical synthesis of vertically aligned ZnO nanorod (NR) arrays, directly on transparent aluminium-doped zinc oxide (AZO) electrodes. The NRs grow from mild, aqueous-based solution at low temperature, with no need for catalysts or additional seed layer. The use of textured AZO as substrate allows for highly effective growth of hexagonally faceted, single-crystalline ZnO NRs along the wurtzitec-axis. The matching of the crystal lattices initiates a self-seeding route, thus the inherent growth habit of the AZO crystallites advances the vertical growth and alignment of NRs. Moreover, the thickness-dependant grain size of the AZO layer provides a valuable feature for tuning the diameter of ZnO NRs grown atop. In the absence of any seed mediator, the interfacial quality is expected to improve significantly. This should enhance the thermal and electrical transport throughout the whole nanostructured transparent electrode. The NR growth was investigated under systematic manipulation of the synthesis variables in order to optimize growth conditions for highly aligned, single-crystalline NRs with a large aspect ratio and a good optical quality. The structure and optical property of the AZO/ZnO NR ensembles were characterized by atomic force microscopy, scanning electron microscopy, X-ray diffraction, photoluminescence, and ultraviolet-visible transmission spectroscopy.


2016 ◽  
Vol 239 ◽  
pp. 131-138 ◽  
Author(s):  
Weiwei Yu ◽  
Tiangui Liu ◽  
Shiyi Cao ◽  
Chen Wang ◽  
Chuansheng Chen

Carbon ◽  
2004 ◽  
Vol 42 (2) ◽  
pp. 317-321 ◽  
Author(s):  
C.X. Wang ◽  
G.W. Yang ◽  
C.X. Gao ◽  
H.W. Liu ◽  
Y.H. Han ◽  
...  

2011 ◽  
Vol 10 (04n05) ◽  
pp. 635-639 ◽  
Author(s):  
AJAY KUSHWAHA ◽  
M. ASLAM

Highly oriented zinc oxide nanorod array is fabricated on ZnO quantum dots functionalized amorphous glass substrate. Simplified aqueous based beaker-chemistry is utilized for a controlled growth of vertically oriented nanorod arrays. XRD studies exhibit (002) orientation of the nanorod arrays which are achieved by sheer control of parameters such as ZnO seed layer morphology, molarity, reaction time and deposition temperature. A lower concentration of precursor leads to the sparse nanorods alignment while a higher concentration renders a (002) oriented of nanorod array film. We find that the amorphous substrate plays no role and a pre-annealed quantum dot array leads to an oriented structure when the growth is faster and the quantum dot surface provides an optimal site for oriented growth. The photoluminescence (PL) spectra reflect a strong UV emission at 380 nm and a broad green orange emission band nearly 600 nm which is generally attributed to the defect band transition. UV-visible spectra has a sharp jump at 380 nm for the excitonic band absorptions. The DC conductivity measurement reveals that the film is a good semiconductor (order of σ = 10-7 ohm-1 cm-1) and provides a very promising platform for photovoltaic and optoelectronic device applications. The conductivity of the ZnO nanorod array becomes higher in orders of 10 with the illumination of UV light of the 350 nm wavelength.


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