Determination of interface roughness of Gd films deposited on Si surface using improved wavelet transform of X-ray reflectivity data

2005 ◽  
Vol 244 (1-4) ◽  
pp. 235-239 ◽  
Author(s):  
Oleksiy Starykov ◽  
Kenji Sakurai
Keyword(s):  
Wavelet Transform ◽  
Interface Roughness ◽  
X Ray ◽  
Reflectivity Data

Grazing-incidence X-Ray Analysis of Surfaces and Thin Films

1991 ◽  
Vol 35 (A) ◽  
pp. 143-150 ◽  
Author(s):  
T. C. Huang
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Grazing Incidence ◽  
Bragg Diffraction ◽  
Interface Roughness ◽  
Phase Identification ◽  
X Ray ◽  
Types Of Information

AbstractGrazing-incidence X-ray analysis techniques which are commonly used for the nondestructive characterization of surfaces and thin films are reviewed. The X-ray reflectivity technicue is used to study surface uniformity and oxidation, layer thickness and density, interface roughness and diffusion, etc. The grazing-incidence in-plane diffraction technique is used to determine in-plane crystallography of epitaxial films. The grazing-incidence asymmetric-Bragg diffraction is used for surface phase identification and structural depth profiling determination of polycrystalline films. Typical examples to illustrate the types of information that can be obtained by the techniques are presented.

Structural Studies of Sputtered Ni80Co20/Cu Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
X. Bian ◽  
Z. Altounian ◽  
J. O. Ström-Olsen ◽  
M. Sutton ◽  
R. W. Cochrane
Keyword(s):  
Optical Model ◽  
Film Growth ◽  
Growth Direction ◽  
Interface Roughness ◽  
High Angle ◽  
X Ray ◽  
Compositional Modulation ◽  
Large Expansion ◽  
Reflectivity Data ◽  
Coherent Interfaces

ABSTRACTThe structure of magnetron-sputtered Ni80Co20/Cu multilayershas been investigated by low and high-angle X-ray diffractometry. Low-angle x-ray reflectivity data reveal well-defined compositional modulation along the film growth direction for a wide Cii thickness range of 5-40 Å. The data analysis, based on anl optical model, shows that interfacial mixing is limited to ∼3-4 Å As the number of bilayers increased from 8 to 100, the interface roughness increased by a factor of 3. Better layered structures were found for relatively thick Cu layers (tCu>10Å). The high-angle diffraction data were analyzed using a trapezoidal model. The results indicate that the films have a polycrystalline structure with a preferred (111)orientation with coherent interfaces of ∼ 100-240 Ådepending on the Cu layer thickness. The relatively large expansion of (111) spacings in NiCo alloy layers gives rise to the lower atomic ordering in NiCo/Cu multilayers.

Structural and Magnetoresistance Studies of Ni/Co Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
J.M. Freitag ◽  
J.M. Ström-Olsen ◽  
Z. Altounian ◽  
R.W. Cochrane
Keyword(s):  
Film Growth ◽  
Classical Model ◽  
Growth Direction ◽  
Interface Roughness ◽  
Thickness Variation ◽  
Zero Field ◽  
Saturation Field ◽  
X Ray ◽  
Superlattice Structure ◽  
Reflectivity Data

ABSTRACTA study of ferromagnetic/ferromagnetic Ni/Co multilayers grown by DC magnetron sputtering with component layer thicknesses between 40 and 5 Å is presented. Structural characterization by small-angle x-ray reflectivity reveals high-quality layered structures with a well-defined composition modulation along the film growth direction. Quantitative interpretation of the superlattice structure parameters, including interface roughness and intermixing, has been performed by modelling the x-ray reflectivity data. Measurements of the magnetotransport properties of these multilayers indicate that the magnetoresistance (MR) effect, Ap ∼ 0.35 μΩ-cm, is roughly constant over the entire compositional range. We attribute the origin of this effect to anisotropie magnetoresistance (AMR). The MR ratio Ap/p, which is as high as 3.0% in a SiO2/(Ni40Å/Co5Å)×6 multilayer with saturation field ∼ 80 Oe, is therefore more strongly dependent on the zero-field resistivity. By fitting a semi-classical model of conduction in multilayers to the resistivity thickness variation, we extracted the mean free paths for conduction in each of the constituent layers as well as the contribution of interfacial scattering in the superlattice structure.

Interface Roughness Determined by Diffuse Scattering and by Reflectivity of Hard X-Rays

1992 ◽  
Vol 280 ◽  
Author(s):  
B. Lengeler ◽  
M. Hüppauff
Keyword(s):  
Born Approximation ◽  
Diffuse Scattering ◽  
Interface Roughness ◽  
X Rays ◽  
Distorted Wave ◽  
Distorted Wave Born Approximation ◽  
X Ray ◽  
Non Destructive

ABSTRACTX-ray reflectivity and diffuse scattering are powerful techniques for the non-destructive determination of the vertical and lateral roughness of external and internal interfaces. The influence of roughness on the reflected and transmitted amplitudes is treated in terms of a model first described by Névot and Croce. The diffuse scattering is described by an improved distorted wave Born approximation. A few examples will demonstrate the possibilities of the techniques.

Determination of the composition of Ultra-thin Ni-Si films on Si: constrained modeling of electron probe microanalysis and x-ray reflectivity data

2008 ◽  
Vol 37 (6) ◽  
pp. 608-614 ◽  
Author(s):  
Tran M. Phung ◽  
Jacob M. Jensen ◽  
David C. Johnson ◽  
John J. Donovan ◽  
Brian G. McBurnett
Keyword(s):  
Electron Probe Microanalysis ◽  
Electron Probe ◽  
X Ray ◽  
Reflectivity Data ◽  
Si Films
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