Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer
2004 ◽
Vol 234
(1-4)
◽
pp. 493-496
◽
Keyword(s):
2004 ◽
Vol 72
(1-4)
◽
pp. 283-287
◽
Keyword(s):
Keyword(s):
1972 ◽
Vol 33
(C3)
◽
pp. C3-57-C3-72
◽
Keyword(s):
1972 ◽
Vol 33
(C3)
◽
pp. C3-223-C3-233
◽
2018 ◽
Vol 1
(1)
◽
pp. 46-50
Keyword(s):
2019 ◽
Vol 58
(9)
◽
pp. 5533-5542
◽
Keyword(s):