Microwave performances of silicon heterostructure-FETs

F. Aniel; M. Enciso; S. Richard; L. Giguerre; N. Zerounian; P. Crozat; R. Adde; T. Hackbarth; J-H. Herzog; U. König

doi:10.1016/j.apsusc.2003.08.080

Microwave performances of silicon heterostructure-FETs

Applied Surface Science ◽

10.1016/j.apsusc.2003.08.080 ◽

2004 ◽

Vol 224 (1-4) ◽

pp. 370-376 ◽

Cited By ~ 2

Author(s):

F. Aniel ◽

M. Enciso ◽

S. Richard ◽

L. Giguerre ◽

N. Zerounian ◽

...

Keyword(s):

Heterostructure Fets

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Optimization and benchmarking of graphene-based heterostructure FETs

2014 International Workshop on Computational Electronics (IWCE) ◽

10.1109/iwce.2014.6865838 ◽

2014 ◽

Cited By ~ 1

Author(s):

D. Logoteta ◽

G. Fiori ◽

G. Iannaccone

Keyword(s):

Heterostructure Fets

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AlGaN-GaN heterostructure FETs with offset gate design

Electronics Letters ◽

10.1049/el:19970818 ◽

1997 ◽

Vol 33 (14) ◽

pp. 1255 ◽

Cited By ~ 37

Author(s):

R. Gaska ◽

Q. Chen ◽

J. Yang ◽

M. Asif Khan ◽

M.S. Shur ◽

...

Keyword(s):

Heterostructure Fets ◽

Gan Heterostructure ◽

Gate Design

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Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs

IEEE Electron Device Letters ◽

10.1109/55.784448 ◽

1999 ◽

Vol 20 (9) ◽

pp. 448-450 ◽

Cited By ~ 131

Author(s):

I. Daumiller ◽

C. Kirchner ◽

M. Kamp ◽

K.J. Ebeling ◽

E. Kohn

Keyword(s):

Temperature Stability ◽

Heterostructure Fets ◽

Gan Heterostructure

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Strained-Si heterostructure FETs

Applications of Silicon?Germanium Heterostructure Devices ◽

10.1887/0750307234/b894c6 ◽

2004 ◽

Keyword(s):

Strained Si ◽

Heterostructure Fets

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A review of the use of electro-thermal simulations for the analysis of heterostructure FETs

Microelectronics Reliability ◽

10.1016/j.microrel.2006.03.014 ◽

2007 ◽

Vol 47 (1) ◽

pp. 65-73 ◽

Cited By ~ 14

Author(s):

Giovanna Sozzi ◽

Roberto Menozzi

Keyword(s):

Heterostructure Fets ◽

Thermal Simulations

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Delta-doped complementary heterostructure FETs with high Y-value pseudomorphic In/sub 1/Ga/sub 1-y/As channels for ultra-low-power digital IC applications

International Electron Devices Meeting 1991 [Technical Digest] ◽

10.1109/iedm.1991.235459 ◽

2002 ◽

Cited By ~ 1

Author(s):

D.E. Grider ◽

P.P. Ruden ◽

J.C. Nohava ◽

I.R. Mactaggart ◽

J.J. Stronczer ◽

...

Keyword(s):

Low Power ◽

Ultra Low Power ◽

Heterostructure Fets

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Very High Performance, Ultrathin, Strained-Ge Channel, Heterostructure FETs with High Mobility and Low BTBT Leakage

ECS Meeting Abstracts ◽

10.1149/ma2006-02/31/1471 ◽

2006 ◽

Keyword(s):

High Performance ◽

High Mobility ◽

Heterostructure Fets ◽

Very High

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Degradation Characteristics of High-Voltage AlGaN/GaN-on-Si Heterostructure FETs under DC Stress

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340103 ◽

2012 ◽

Author(s):

Shinhyuk Choi ◽

Jae-Gil Lee ◽

Hoonsang Yoon ◽

Ho-Young Cha ◽

Hyungtak Kim

Keyword(s):

High Voltage ◽

Heterostructure Fets ◽

Gan On Si ◽

Dc Stress

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Nonvolatile Memory Effects in GaN Metal-Oxide-Semiconductor Heterostructure FETs with Thin AlGaN Barrier

10.7567/ssdm.2015.ps-6-15 ◽

2015 ◽

Author(s):

D.M. Keum ◽

K.H. Cho ◽

H.T. Kim

Keyword(s):

Metal Oxide ◽

Nonvolatile Memory ◽

Metal Oxide Semiconductor ◽

Memory Effects ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Algan Barrier ◽

Heterostructure Fets

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Heterostructure FETs for high speed applications

10.1109/iscas.1988.15265 ◽

2003 ◽

Author(s):

S.S. Pei

Keyword(s):

High Speed ◽

Heterostructure Fets

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