In Situ Analysis of Multiphase Compounds at the Liquid Al-Solid Cu Interface: Formation Sequence, Growth Kinetics and Critical Thickness

2020 ◽  
Vol 51 (10) ◽  
pp. 5245-5256
Author(s):  
Zongye Ding ◽  
Qiaodan Hu ◽  
Sheng Cao ◽  
Tianxing Yang ◽  
Fan Yang ◽  
...  
Keyword(s):  
Growth Kinetics ◽  
Critical Thickness ◽  
In Situ Analysis ◽  
Interface Formation

Interplay of Strain, Growth Kinetics and Surface Bonding in Growth Modes and Dislocation Generation in Strained Heteroepitaxy

1990 ◽  
Vol 202 ◽  
Author(s):  
C. Snyder ◽  
J. Pamulapati ◽  
B. Orr ◽  
P. K. Bhattacharya ◽  
J. Singh
Keyword(s):  
Growth Kinetics ◽  
Strain Energy ◽  
Critical Thickness ◽  
Dislocation Generation ◽  
3 Dimensional ◽  
Growth Modes ◽  
Atomistic Modelling ◽  
Pseudomorphic Growth

ABSTRACTIn this paper we examine the role of strain and growth kinetics on the growth modes in pseudomorphic growth. Regimes below critical thickness and above critical thickness are examined. Based on atomistic modelling and in-situ RHEED and STM studies we show that a competition between surface chemical energy and strain energy is shown to lead to 3-dimensional blend mode for high strain pseudomorphy. Consequences for dislocation generation are discussed.

In Situ Analysis and Visualization with CREATE-AVTMHelios

2021 ◽  
Author(s):  
Andrew C. Bauer ◽  
James R. Forsythe ◽  
Jay Sitaraman ◽  
Andrew M. Wissink ◽  
Buvaneswari Jayaraman ◽  
...  
Keyword(s):  
In Situ Analysis

scholarly journals Visualization and in situ analysis of leukocyte trafficking into the ankle joint in a systemic murine model of rheumatoid arthritis

2005 ◽  
Vol 52 (10) ◽  
pp. 3269-3278 ◽  
Author(s):  
István Gál ◽  
Éva Bajnok ◽  
Sándor Szántó ◽  
Bara Sarraj ◽  
Tibor T. Glant ◽  
...  
Keyword(s):  
Rheumatoid Arthritis ◽  
Ankle Joint ◽  
Murine Model ◽  
In Situ Analysis ◽  
Leukocyte Trafficking

Ge-Quantum Dots on SI(001) Tailored by Carbon Predeposition

1998 ◽  
Vol 533 ◽  
Author(s):  
O. Leifeld ◽  
D. Grützmacher ◽  
B. Müller ◽  
K. Kern
Keyword(s):  
Surface Roughness ◽  
Critical Thickness ◽  
Carbon Deposition ◽  
Compressive Strain ◽  
Second Step ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Island Nucleation ◽  
Facet Formation

AbstractThe morphology of Si(001) after carbon deposition of 0.05 to 0.11 monolayers (ML) was investigated in situ by ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The carbon induces a c(4×4)-reconstruction of the surface. In addition, carbon increases the surface roughness compared to clean Si(001) (2×1). In a second step, the influence of the carbon induced restructuring on Ge-island nucleation was investigated. The 3D-growth sets in at considerably lower Ge coverage compared to the clean Si(001) (2×1) surface. This leads to a high density of small though irregularly shaped dots, consisting of stepped terraces, already at 2.5 ML Ge. Increasing the Ge-coverage beyond the critical thickness for facet formation, the dots show { 105 }- facets well known from Ge-clusters on bare Si(001) (2×1). However, they are flat on top with a (001)-facet showing the typical buckled Ge rows and missing dimers. This indicates that the compressive strain is not fully relaxed in these hut clusters.

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