Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system

2021 ◽  
Author(s):  
Karl Cedric Gonzales ◽  
Elizabeth Ann Prieto ◽  
Gerald Angelo Catindig ◽  
Alexander De Los Reyes ◽  
Maria Angela Faustino ◽  
...  
Keyword(s):  
Structural Defects ◽  
Buffer System ◽  
Terahertz Emission ◽  
Gaas Films

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 32 (4) ◽  
pp. 418-425 ◽  
Author(s):  
Takashi Yoshioka ◽  
Satoru Takatori ◽  
Pham Hong Minh ◽  
Marilou Cadatal-Raduban ◽  
Tomoharu Nakazato ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Terahertz Emission ◽  
Gaas Films

scholarly journals Terahertz Emission Increase in GaAs Films Exhibiting Structural Defects Grown on Si (100) Substrates Using a Two-Layered LTG-GaAs Buffer System

2021 ◽  
Author(s):  
Karl Cedric Gonzales ◽  
Elizabeth Ann Prieto ◽  
Gerald Angelo Catindig ◽  
Alexander De Los Reyes ◽  
Maria Angela Faustino ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
High Energy ◽  
Layer Growth ◽  
Structural Defects ◽  
Buffer System ◽  
Layer By Layer ◽  
Material System ◽  
Reflection And Transmission ◽  
Gaas On Si

Abstract Terahertz (THz) emission increase is observed for GaAs thin films that exhibit structural defects. The GaAs epilayers are grown by molecular beam epitaxy on exactly oriented Si (100) substrates at three different temperatures (Ts = 320ºC, 520ºC and 630ºC). The growth method involves the deposition of two low-temperature-grown (LTG)-GaAs buffers with subsequent in-situ thermal annealing at Ts = 600ºC. Reflection high energy electron diffraction confirms the layer-by-layer growth mode of the GaAs on Si. X-ray diffraction shows the improvement in crystallinity as growth temperature is increased. The THz time-domain spectroscopy is performed in reflection and transmission excitation geometries. At Ts = 320ºC, the low crystallinity of GaAs on Si makes it an inferior THz emitter in reflection geometry, over a GaAs grown at the same temperature on a semi-insulating GaAs substrate. However, in transmission geometry, the GaAs on Si exhibits less absorption losses. At higher Ts, the GaAs on Si thin films emerge as promising THz emitters despite the presence of antiphase boundaries and threading dislocations as identified from scanning electron microscopy and Raman spectroscopy. An intense THz emission in reflection and transmission excitation geometries is observed for the GaAs on Si grown at Ts = 520ºC, suggesting the existence of an optimal growth temperature for GaAs on Si at which the THz emission is most efficient in both excitation geometries. The results are significant in the growth design and fabrication of GaAs on Si material system intended for future THz photoconductive antenna emitter devices.

Transmission electron microscopy of composite materials

1988 ◽  
Vol 46 ◽  
pp. 1012-1015
Author(s):  
K.P.D. Lagerlof
Keyword(s):  
Composite Materials ◽  
Physical Properties ◽  
Structural Defects ◽  
Structural Composites ◽  
Multiphase Materials ◽  
Structural Reinforcement ◽  
Transmission Electron ◽  
Reinforced Fiber ◽  
Particulate Reinforced Composites ◽  
Definition Of

Although most materials contain more than one phase, and thus are multiphase materials, the definition of composite materials is commonly used to describe those materials containing more than one phase deliberately added to obtain certain desired physical properties. Composite materials are often classified according to their application, i.e. structural composites and electronic composites, but may also be classified according to the type of compounds making up the composite, i.e. metal/ceramic, ceramic/ceramie and metal/semiconductor composites. For structural composites it is also common to refer to the type of structural reinforcement; whisker-reinforced, fiber-reinforced, or particulate reinforced composites [1-4].For all types of composite materials, it is of fundamental importance to understand the relationship between the microstructure and the observed physical properties, and it is therefore vital to properly characterize the microstructure. The interfaces separating the different phases comprising the composite are of particular interest to understand. In structural composites the interface is often the weakest part, where fracture will nucleate, and in electronic composites structural defects at or near the interface will affect the critical electronic properties.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

High-angle electron scattering from amorphous silicon

1995 ◽  
Vol 53 ◽  
pp. 162-163
Author(s):  
M. Libera ◽  
J.A. Ott ◽  
K. Siangchaew ◽  
L. Tsung
Keyword(s):  
Electron Scattering ◽  
Amorphous Material ◽  
Structural Defects ◽  
Constant Thickness ◽  
High Angle ◽  
Fast Electrons ◽  
Angle Scattering ◽  
Stem Image ◽  
Amorphous Si ◽  
Thermal Vibrations

Channeling occurs when fast electrons follow atomic strings in a crystal where there is a minimum in the potential energy (1). Channeling has a strong effect on high-angle scattering. Deviations in atomic position along a channel due to structural defects or thermal vibrations increase the probability of scattering (2-5). Since there are no extended channels in an amorphous material the question arises: for a given material with constant thickness, will the high-angle scattering be higher from a crystal or a glass?Figure la shows a HAADF STEM image collected using a Philips CM20 FEG TEM/STEM with inner and outer collection angles of 35mrad and lOOmrad. The specimen (6) was a cross section of singlecrystal Si containing: amorphous Si (region A), defective Si containing many stacking faults (B), two coherent Ge layers (CI; C2), and a contamination layer (D). CBED patterns (fig. lb), PEELS spectra, and HAADF signals (fig. lc) were collected at 106K and 300K along the indicated line.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Fibrin Formation: The Role of the Fibrinogen-Fibrin Monomer Complex

1976 ◽  
Vol 36 (01) ◽  
pp. 037-048 ◽  
Author(s):  
Eric P. Brass ◽  
Walter B. Forman ◽  
Robert V. Edwards ◽  
Olgierd Lindan
Keyword(s):  
Particle Size ◽  
Induction Period ◽  
Fibrin Clot ◽  
Clot Formation ◽  
Appreciable Amount ◽  
Buffer System ◽  
Homeostatic Mechanism ◽  
Fibrin Formation ◽  
Fibrin Monomer

SummaryThe process of fibrin formation using highly purified fibrinogen and thrombin was studied using laser fluctuation spectroscopy, a method that rapidly determines particle size in a solution. Two periods in fibrin clot formation were noted: an induction period during which no fibrin polymerization occurred and a period of rapid increase in particle size. Direct measurement of fibrin monomer polymerization and fibrinopeptide release showed no evidence of an induction period. These observations were best explained by a kinetic model for fibrin clot formation incorporating a reversible fibrinogen-fibrin monomer complex. In this model, the complex serves as a buffer system during the earliest phase of fibrin formation. This prevents the accumulation of free polymerizable fibrin monomer until an appreciable amount of fibrinogen has reacted with thrombin, at which point the fibrin monomer level rises rapidly and polymerization proceeds. Clinically, the complex may be a homeostatic mechanism preventing pathological clotting during periods of elevated fibrinogen.

Human Blood Platelet Membrane Glycoproteins

1979 ◽  
Vol 42 (05) ◽  
pp. 1490-1502 ◽  
Author(s):  
C S P Jenkins ◽  
E F Ali-Briggs ◽  
G T E Zonneveld ◽  
A Sturk ◽  
J Clemetson
Keyword(s):  
Specific Problem ◽  
Sodium Dodecyl ◽  
Normal Subjects ◽  
Blood Platelet ◽  
Platelet Membrane ◽  
Buffer System ◽  
Membrane Glycoprotein ◽  
Membrane Glycoproteins ◽  
Human Blood Platelet ◽  
Electrophoretic Techniques

SummaryThe separation of the major platelet membrane glycoproteins of normal subjects and subjects with well defined platelet membrane glycoprotein abnormalities have been examined using four different polyacrylamide gel electrophoretic techniques (continuous and discontinuous). The mobilities of the resolved glycoprotein bands have been correlated with the glycoprotein nomenclature proposed for the conventional sodium dodecyl sulphate- phosphate buffer system. Since the glycoprotein distribution varies depending on the system used, the merits of each method should be considered before application to a specific problem.

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