scholarly journals Coherent dark states of rubidium 87 in a buffer gas using pulsed laser light

1998 ◽  
Vol 3 (2) ◽  
pp. 159 ◽  
Author(s):  
S. Brattke ◽  
U. Kallmann ◽  
W.-D. Hartmann
Keyword(s):  
1998 ◽  
Vol 3 (2) ◽  
pp. 159-161
Author(s):  
S. Brattke ◽  
U. Kallmann ◽  
W.-D. Hartmann
Keyword(s):  

2008 ◽  
Vol 36 (Supplement) ◽  
pp. 201-202
Author(s):  
Yasuhiro Awatsuji ◽  
Kenzo Nishio ◽  
Shogo Ura ◽  
Toshihiro Kubota

2013 ◽  
Vol 543 ◽  
pp. 30-34 ◽  
Author(s):  
Aljona Ramonova ◽  
Tengiz Butkhuzi ◽  
Viktorija Abaeva ◽  
I.V. Tvauri ◽  
Soslan Khubezhov ◽  
...  

Laser-induced fragmentation and desorption of fragments of PTCDA films vacuum-deposited on GaAs (100) substrate has been studied by time-of-flight (TOF) mass spectroscopy. The main effect caused by pulsed laser light irradiation (pulse duration: 10 ns, photon energy: 2.34 eV and laser fluence ranging from 0.5 to 7 mJ/cm2) is PTCDA molecular fragmentation and desorption of the fragments formed, whereas no desorption of intact PTCDA molecule was detected. Fragments formed are perylene core C20H8, its half C10H4, carbon dioxide, carbon monoxide and atomic oxygen. All desorbing fragments have essentially different kinetic energy. The mechanism of photoinduced molecular fragmentation and desorption is discussed.


2009 ◽  
Vol 255 (24) ◽  
pp. 9822-9825 ◽  
Author(s):  
Rodica Morarescu ◽  
David Blázquez Sánchez ◽  
Nils Borg ◽  
Tigran A. Vartanyan ◽  
Frank Träger ◽  
...  

1992 ◽  
Vol 56 (3) ◽  
pp. 235-238 ◽  
Author(s):  
O. N. Ezhov ◽  
B. R. Kano ◽  
S. V. Oshemkov ◽  
A. A. Petrov

1997 ◽  
Vol 82 (6) ◽  
pp. 3129-3133 ◽  
Author(s):  
J. Gonzalo ◽  
C. N. Afonso ◽  
J. M. Ballesteros ◽  
A. Grosman ◽  
C. Ortega

1989 ◽  
Vol 162 ◽  
Author(s):  
George W. Tyndall ◽  
Nigel P. Hacker

ABSTRACTA KrF* (248 nm) laser-based process for the deposition of carbon films containing a large fraction of diamond is reported. The experiment consists of focusing the pulsed laser beam at normal incidence onto the surface of a low temperature (20° - 150° C) silicon substrate in the presence of acetic or malonic acid vapor. The process does not require the presence of hydrogen, although an inert buffer gas, e. g. argon, is usually employed. Deposition rates of approximately 1 μm - hour−1 are obtained, and the presence of diamond in the deposited film is inferred from Raman Spectroscopy and Auger Electron Spectroscopy.


1999 ◽  
Vol 80 (3-4) ◽  
pp. 344-351 ◽  
Author(s):  
B W Pogue ◽  
T Momma ◽  
H C Wu ◽  
T Hasan

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