Thin Films and Interfaces of Electroactive Organic Materials: The Surface Science Approach

2001 ◽  
Vol 132 (4) ◽  
pp. 509-518 ◽  
Author(s):  
Robert I. R. Blyth ◽  
Renate Duschek ◽  
Georg Koller ◽  
Falko P. Netzer ◽  
Michael G. Ramsey
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
Organic Materials ◽  
Science Approach

Thin Films and Interfaces of Electroactive Organic Materials: The Surface Science Approach

2001 ◽  
pp. 89-98
Author(s):  
Robert I. R. Blyth ◽  
Renate Duschek ◽  
Georg Koller ◽  
Falko P. Netzer ◽  
Michael G. Ramsey
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
Organic Materials ◽  
Science Approach

scholarly journals The Growth of Semiconductor Thin Films Studied by RHEED

1990 ◽  
Vol 43 (5) ◽  
pp. 583
Author(s):  
GL Price
Keyword(s):  
Thin Films ◽  
Surface Science ◽  
High Vacuum ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Large Area ◽  
Growth Modes ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Recent Developments

Recent developments in the growth of semiconductor thin films are reviewed. The emphasis is on growth by molecular beam epitaxy (MBE). Results obtained by reflection high energy electron diffraction (RHEED) are employed to describe the different kinds of growth processes and the types of materials which can be constructed. MBE is routinely capable of heterostructure growth to atomic precision with a wide range of materials including III-V, IV, II-VI semiconductors, metals, ceramics such as high Tc materials and organics. As the growth proceeds in ultra high vacuum, MBE can take advantage of surface science techniques such as Auger, RHEED and SIMS. RHEED is the essential in-situ probe since the final crystal quality is strongly dependent on the surface reconstruction during growth. RHEED can also be used to calibrate the growth rate, monitor growth kinetics, and distinguish between various growth modes. A major new area is lattice mismatched growth where attempts are being made to construct heterostructures between materials of different lattice constants such as GaAs on Si. Also described are the new techniques of migration enhanced epitaxy and tilted superlattice growth. Finally some comments are given On the means of preparing large area, thin samples for analysis by other techniques from MBE grown films using capping, etching and liftoff.

scholarly journals Effect of ammonia on cobalt Fischer–Tropsch synthesis catalysts: a surface science approach

2019 ◽  
Vol 9 (3) ◽  
pp. 702-710
Author(s):  
Ali Can Kizilkaya ◽  
J. W. Niemantsverdriet ◽  
C. J. Weststrate
Keyword(s):  
Surface Science ◽  
Tropsch Synthesis ◽  
Fischer Tropsch ◽  
Fischer Tropsch Synthesis ◽  
Defect Sites ◽  
Science Approach ◽  
Synthesis Catalysts

Undercoordinated (defect) sites on cobalt surfaces favor NH3 decomposition and dehydrogenated products adsorb strongly around these defect sites.

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