The spatial distribution of small signal gain in a segmented hollow cathode discharge laser

1997 ◽  
Vol 65 (4-5) ◽  
pp. 613-618 ◽  
Author(s):  
T.M. Adamowicz ◽  
Z. Donkó ◽  
L. Szalai ◽  
K. Rózsa ◽  
W. Kwaśniewski
Keyword(s):  
Spatial Distribution ◽  
Hollow Cathode ◽  
Hollow Cathode Discharge ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Discharge Laser

Measurement of the small-signal gain and saturation intensity of a XeF discharge laser

1997 ◽  
Vol 36 (6) ◽  
pp. 1139 ◽  
Author(s):  
Parviz Parvin ◽  
Mohammad S. Zaeferani ◽  
Kavoos Mirabbaszadeh ◽  
Rassoul Sadighi
Keyword(s):  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Saturation Intensity ◽  
Discharge Laser

Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers

2018 ◽  
Vol 10 (9) ◽  
pp. 999-1010 ◽  
Author(s):  
Michele Squartecchia ◽  
Tom K. Johansen ◽  
Jean-Yves Dupuy ◽  
Virginio Midili ◽  
Virginie Nodjiadjim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Output Power ◽  
Heterojunction Bipolar Transistors ◽  
Power Amplifiers ◽  
Small Signal Gain ◽  
Small Signal ◽  
Large Signal ◽  
Signal Gain ◽  
Power Added Efficiency ◽  
Saturated Output Power

AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.

Toward a zero small‐signal gain laser power amplifier

1974 ◽  
Vol 25 (10) ◽  
pp. 602-605 ◽  
Author(s):  
G. T. Schappert ◽  
E. E. Stark
Keyword(s):  
Power Amplifier ◽  
Laser Power ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain

37.2dB small-signal gain from Er/Yb Co-doped fiber amplifier with 20mW pump power

2008 ◽  
Vol 40 (1) ◽  
pp. 88-91 ◽  
Author(s):  
S.W. Harun ◽  
H.A. Abdul-Rashid ◽  
S.Z. Muhd-Yassin ◽  
M.K. Abd-Rahman ◽  
K.K. Jayapalan ◽  
...  
Keyword(s):  
Pump Power ◽  
Fiber Amplifier ◽  
Small Signal Gain ◽  
Small Signal ◽  
Signal Gain ◽  
Co Doped
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