A kinetic Monte Carlo investigation of island nucleation and growth in thin-film epitaxy in the presence of substrate-mediated interactions

2002 ◽  
Vol 75 (1) ◽  
pp. 17-23 ◽  
Author(s):  
K.A. Fichthorn ◽  
M.L. Merrick ◽  
M. Scheffler
2013 ◽  
Vol 740-742 ◽  
pp. 393-396
Author(s):  
Maxim N. Lubov ◽  
Jörg Pezoldt ◽  
Yuri V. Trushin

The influence of attractive and repulsive impurities on the nucleation process of the SiC clusters on Si(100) surface was investigated. Kinetic Monte Carlo simulations of the SiC clusters growth show that that increase of the impurity concentration (both attractive and repulsive) leads to decrease of the mean cluster size and rise of the nucleation density of the clusters.


2007 ◽  
Vol 9 (5) ◽  
pp. 550-555 ◽  
Author(s):  
Liu Zuli ◽  
Shi Yanli ◽  
Jing Xingbin ◽  
Yu Li ◽  
Yao Kailun

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