Cavity ring-down spectroscopy of CH and CD radicals in a diamond thin film chemical vapor deposition reactor

2001 ◽  
Vol 73 (1) ◽  
pp. 27-33 ◽  
Author(s):  
U. Lommatzsch ◽  
E.H. Wahl ◽  
D. Aderhold ◽  
T.G. Owano ◽  
C.H. Kruger ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cavity Ring Down Spectroscopy ◽  
Chemical Vapor Deposition Reactor ◽  
Diamond Thin Film ◽  
Cavity Ring Down

Role of xenon additive in microwave plasma-assisted (H2+CH4) chemical vapor deposition of diamond thin film

1998 ◽  
Vol 84 (11) ◽  
pp. 6059-6063 ◽  
Author(s):  
Takeshi Hosomi ◽  
Tetsuro Maki ◽  
Takeshi Kobayashi ◽  
Yuji Yoshizako ◽  
Michio Taniguchi ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Thin Film

Analysis and modeling of residual stress in diamond thin film deposited by the hot-filament chemical vapor deposition process

2001 ◽  
Vol 16 (7) ◽  
pp. 1953-1959
Author(s):  
Seung I. Cha ◽  
Soon H. Hong
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Chemical Vapor Deposition Process ◽  
Diamond Thin Film ◽  
Hot Filament ◽  
Vapor Deposition Process

The effect of microstructure on residual stress in diamond thin film was investigated. The diamond thin film was deposited by the hot filament chemical vapor deposition process with hydrogen/methane precursor gas and followed by annealing at 1150 °C for 1–30 min. The residual stresses of the diamond thin film were measured by Raman spectroscopy. A model to estimate the residual stress was proposed on the basis of grain boundary relaxation mechanism and microstructural analysis of diamond thin film. It is confirmed that the residual stress in diamond thin film is proportional to a microstructural factor, 1/ [D( f + 1)]1/2, where D is the grain size of diamond and f is the volume ratio of nondiamond carbon/diamond.

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