Excimer laser beam homogenizer with low divergence

1999 ◽  
Vol 69 (7) ◽  
pp. S315-S318 ◽  
Author(s):  
K. Jasper ◽  
S. Scheede ◽  
B. Burghardt ◽  
R. Senczuk ◽  
P. Berger ◽  
...  
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Beam Homogenizer

High Resolution Displacement of Functional Groups onto Fluorocarbon Resin Surface by Using ArF Excimer Laser

1996 ◽  
Vol 451 ◽  
Author(s):  
T. Shimizu ◽  
M. Murahara
Keyword(s):  
Contact Angle ◽  
High Resolution ◽  
Laser Beam ◽  
Thin Layer ◽  
Functional Groups ◽  
Excimer Laser ◽  
Laser Fluence ◽  
Large Area ◽  
Three Solutions ◽  
Arf Excimer Laser

ABSTRACTA Fluorocarbon resin surface was selectively modified by irradiation with a ArF laser beam through a thin layer of NaAlO2, B(OH)3, or H2O solution to give a hydrophilic property. As a result, with low fluence, the surface was most effectively modified with the NaAlO2 solution among the three solutions. However, the contact angle in this case changed by 10 degrees as the fluence changed only 1mJ/cm2. When modifying a large area of the surface, high resolution displacement could not be achieved because the laser beam was not uniform in displacing functional groups. Thus, the laser fluence was successfully made uniform by homogenizing the laser beam; the functional groups were replaced on the fluorocarbon resin surface with high resolution, which was successfully modified to be hydrophilic by distributing the laser fluence uniformly.

Corneal surgery by two-dimensional scanning of a low-energy excimer laser beam

1994 ◽  
Author(s):  
Angela Unkroth ◽  
Karin Pachomis ◽  
Jens-Uwe Walther ◽  
D. Zimare
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Low Energy ◽  
Two Dimensional ◽  
Corneal Surgery

The Recrystallization Depth Control of the Excimer-Laser-Recrystallized Poly-Crystalline Silicon Film

1999 ◽  
Vol 557 ◽  
Author(s):  
Kee-Chan Park ◽  
Kwon-Young Choi ◽  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Min-Koo Han
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Oxide ◽  
Crystalline Silicon ◽  
Silicon Film ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Silicon Oxide Layer ◽  
Thin Oxide Film

AbstractA novel method to control the recrystallization depth of amorphous silicon (a-Si) film during the excimer laser annealing (ELA) is proposed in order to preserve a-Si that is useful for fabrication of poly-Si TFT with a-Si offset in the channel. A XeCl excimer laser beam is irradiated on a triple film structure of a-Si thin native silicon oxide (~20Å)/thick a-Si layer. Only the upper a-Si film is recrystallized by the laser beam irradiation, whereas the lower thick a-Si film remains amorphous because the thin native silicon oxide layer stops the grain growth of the poly-crystalline silicon (poly-Si). So that the thin oxide film sharply divides the upper poly-Si from the lower a-Si.

Excimer Laser Beam Interaction with Sintered Y2O3- Doped Aluminium Nitride Ceramic: Fundamentals and Appplication

1995 ◽  
Vol 397 ◽  
Author(s):  
N. Detournay ◽  
K. Kolev ◽  
T. Robert ◽  
M. Brunel ◽  
L.D. Laude
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Metal Layer ◽  
Aluminium Nitride ◽  
X Ray Diffraction ◽  
Nickel Deposition ◽  
X Ray ◽  
High Electrical Resistivity ◽  
Excellent Adhesion ◽  
Induced Decomposition

ABSTRACTSintered aluminium nitride ceramic is most attractive for applications in modern electronic packaging, due to its high thermal conductivity and its high electrical resistivity. Among the sintering additives which are mentioned in the literature, Y2O3 is used most often as sintering accelerator and densificator for AlN commercial ceramics.Since excimer lasers have recently proved to be efficient in ceramic processing for industry, the effects of excimer laser irradiation on sintered Y2O3;rdoped AlN ceramic have been studied in this work. Raman spectroscopy, low-angle X-ray diffraction and scanning electron microscopy equipped with energy-dispersive X-ray analysis are used for characterizing both the initial and processed materials. The results reveal that yttrium-containing phases which are present at the AlN grain boundaries play an essential role in coupling the (λ =248nm) excimer laser beam with sintered material. Moreover, the laser-induced decomposition of these pre-existing complex phases and the subsequent spinel-like formation upon autocatalytic copper (or nickel) deposition are associated with (and explain) the excellent adhesion of the so-formed metal layer onto the ceramic substrate.

Influence of Excimer Laser Beam Shape on Poly-Si Crystallisation

2004 ◽  
Vol 43 (8A) ◽  
pp. 5114-5121 ◽  
Author(s):  
S. D. Brotherton ◽  
D. J. McCulloch ◽  
J. P. Gowers
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Beam Shape

Preparation of polythiophene thin films by UV laser-assisted deposition of 2,5-dichlorothiophene with a 248 nm excimer laser beam

1998 ◽  
Vol 116 (3) ◽  
pp. 245-249 ◽  
Author(s):  
Satoru Nishio ◽  
Shin-ichi Okada ◽  
Yae Minamimoto ◽  
Motoyoshi Okumura ◽  
Akiyoshi Matsuzaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Beam ◽  
Excimer Laser ◽  
Uv Laser

Characterization of excimer laser beam parameters

1996 ◽  
Author(s):  
Klaus R. Mann ◽  
J. Ohlenbusch ◽  
Volker Westphal
Keyword(s):  
Laser Beam ◽  
Excimer Laser ◽  
Beam Parameters
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