Relaxed Ge x Si 1−x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition
Keyword(s):
Keyword(s):
1997 ◽
Vol 15
(3)
◽
pp. 919-926
◽
Keyword(s):
2007 ◽
Vol 306
(2)
◽
pp. 297-302
◽
1999 ◽
Vol 146
(12)
◽
pp. 4611-4618
◽
Keyword(s):
Keyword(s):
Keyword(s):
1994 ◽
Vol 33
(Part 1, No.1A)
◽
pp. 240-246
◽