Scanning microscopy by mid-infrared near-field scattering

1998 ◽  
Vol 66 (5) ◽  
pp. 477-481 ◽  
Author(s):  
B. Knoll ◽  
F. Keilmann
Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2787-2793 ◽  
Author(s):  
Benedikt Hauer ◽  
Tobias Saltzmann ◽  
Ulrich Simon ◽  
Thomas Taubner

Nanoscale ◽  
2019 ◽  
Vol 11 (30) ◽  
pp. 14113-14117 ◽  
Author(s):  
Mengfei Xue ◽  
Qi Zheng ◽  
Runkun Chen ◽  
Lihong Bao ◽  
Shixuan Du ◽  
...  

Near-field imaging of mid-infrared waveguide in SnSe2 slabs promotes two-dimensional van der Waals materials as building blocks for integrated MIR chips.


2021 ◽  
Vol 9 ◽  
Author(s):  
Yazhou Cheng ◽  
Xinbin Zhang ◽  
Hongxiao Song

We report on the fabrication of optical ridge waveguide in barium fluoride (BaF2) crystal by 15 MeV C5+ ions irradiation with femtosecond laser ablation. The near-field modal profile and propagation loss of the waveguide at mid-infrared wavelength 4 µm are investigated by using end-face coupling system. We implement a series of annealing treatment and it efficiently reduces the propagation loss of the waveguide. The confocal Raman spectra demonstrate that the lattice structure of BaF2 crystal does not change largely after C5+ ion irradiation.


RSC Advances ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 5146-5151 ◽  
Author(s):  
Lulu Chen ◽  
Liaoxin Sun ◽  
Hongxing Dong ◽  
Nanli Mou ◽  
Yaqiang Zhang ◽  
...  

Metamaterial absorbers with tunability have broad prospects for mid-infrared absorption applications.


2020 ◽  
Vol 53 (4) ◽  
Author(s):  
Zaoxia Li ◽  
Shihan Yan ◽  
Ziyi Zang ◽  
Guoshuai Geng ◽  
Zhongbo Yang ◽  
...  

Nanophotonics ◽  
2014 ◽  
Vol 3 (1-2) ◽  
pp. 19-31 ◽  
Author(s):  
Anshuman J. Das ◽  
Ravichandran Shivanna ◽  
K.S. Narayan

AbstractThe advent of optically functional materials with low-intensive processing methods is accompanied by a growing need for high resolution imaging to probe the inherent inhomogeneities in the underlying microstructure. Atomic force microscopy based techniques are typically utilized for imaging the surface of organic thin films, quantum dots and other nanomaterials with ultrahigh resolution. Several modes like conductive, Kelvin, electrostatic amongst others have been particularly successful in imaging the local current, potential and charge distribution of variety of systems. However, the functionality of photoconduction in these materials cannot be directly imaged by these modes alone. There is a requirement for a local excitation source or collection arrangement that is compatible with scanning microscopy techniques followed by a current monitoring mechanism. Near-field scanning optical microscopy (NSOM) possesses all the advantages of scanning microscopy and is capable of local excitation that overcomes the diffraction limit faced by conventional optical microscopes. Additionally, NSOM can be carried out on actual photoconductive two terminal and three terminal device structures to image local optoelectronic properties. In this review, we present the various geometries that have been demonstrated to perform photoconductive NSOM (p-NSOM). We highlight a representative set of important results and discuss the implications of photocurrent imaging in macroscopic device performance.


2006 ◽  
Vol 14 (23) ◽  
pp. 11222 ◽  
Author(s):  
Markus Brehm ◽  
Albert Schliesser ◽  
Fritz Keilmann

1986 ◽  
Vol 59 (10) ◽  
pp. 3318-3327 ◽  
Author(s):  
U. Dürig ◽  
D. W. Pohl ◽  
F. Rohner

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