Characterization of p-n junctions and surface-states on silicon devices by photoemission electron microscopy

1997 ◽  
Vol 64 (5) ◽  
pp. 423-430 ◽  
Author(s):  
M. Giesen ◽  
R.J. Phaneuf ◽  
E.D. Williams ◽  
T.L. Einstein ◽  
H. Ibach
Keyword(s):  
Electron Microscopy ◽  
Surface States ◽  
Photoemission Electron Microscopy ◽  
Silicon Devices ◽  
Photoemission Electron

scholarly journals Imaging and characterization of conducting ferroelectric domain walls by photoemission electron microscopy

2014 ◽  
Vol 104 (23) ◽  
pp. 232904 ◽  
Author(s):  
J. Schaab ◽  
I. P. Krug ◽  
F. Nickel ◽  
D. M. Gottlob ◽  
H. Doğanay ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Domain Walls ◽  
Ferroelectric Domain ◽  
Photoemission Electron Microscopy ◽  
Photoemission Electron

scholarly journals Detection and characterization of attenuated multimode waveguiding in SiO2 slabs using photoemission electron microscopy

2018 ◽  
Vol 98 (8) ◽  
Author(s):  
Alwin Klick ◽  
René Wagner ◽  
Malte Großmann ◽  
Laith F. Kadem ◽  
Till Leißner ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoemission Electron Microscopy ◽  
Photoemission Electron

scholarly journals Characterization of a circular optical nanoantenna by nonlinear photoemission electron microscopy

2016 ◽  
Vol 122 (3) ◽  
Author(s):  
Thomas Kaiser ◽  
Matthias Falkner ◽  
Jing Qi ◽  
Angela Klein ◽  
Michael Steinert ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoemission Electron Microscopy ◽  
Photoemission Electron

scholarly journals Three-dimensional characterization of extreme ultraviolet mask blank defects by interference contrast photoemission electron microscopy

2008 ◽  
Vol 16 (20) ◽  
pp. 15343 ◽  
Author(s):  
Jingquan Lin ◽  
Nils Weber ◽  
Matthias Escher ◽  
Jochen Maul ◽  
Hak-Seung Han ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Extreme Ultraviolet ◽  
Three Dimensional ◽  
Photoemission Electron Microscopy ◽  
Photoemission Electron

Resolution in photoelectron microscopy

1991 ◽  
Vol 49 ◽  
pp. 458-459
Author(s):  
G. F. Rempfer
Keyword(s):  
Electron Microscopy ◽  
Electric Field ◽  
Ultraviolet Light ◽  
Uniform Field ◽  
Virtual Image ◽  
Lens System ◽  
Photoemission Electron Microscopy ◽  
Planar Electrode ◽  
Electron Lens ◽  
Photoemission Electron

In photoelectron microscopy (PEM), also called photoemission electron microscopy (PEEM), the image is formed by electrons which have been liberated from the specimen by ultraviolet light. The electrons are accelerated by an electric field before being imaged by an electron lens system. The specimen is supported on a planar electrode (or the electrode itself may be the specimen), and the accelerating field is applied between the specimen, which serves as the cathode, and an anode. The accelerating field is essentially uniform except for microfields near the surface of the specimen and a diverging field near the anode aperture. The uniform field forms a virtual image of the specimen (virtual specimen) at unit lateral magnification, approximately twice as far from the anode as is the specimen. The diverging field at the anode aperture in turn forms a virtual image of the virtual specimen at magnification 2/3, at a distance from the anode of 4/3 the specimen distance. This demagnified virtual image is the object for the objective stage of the lens system.

scholarly journals Photoemission Electron Microscopy as a New Tool to Study the Electronic Properties of 2D Crystals and Inhomogeneous Semiconductors

2017 ◽  
Vol 23 (S1) ◽  
pp. 1504-1505
Author(s):  
Taisuke Ohta ◽  
Morgann Berg ◽  
Kunttal Keyshar ◽  
Jason M. Kephart ◽  
Thomas E. Beechem ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Electronic Properties ◽  
Photoemission Electron Microscopy ◽  
2D Crystals ◽  
Photoemission Electron
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