Influence of the atomic mass of the background gas on laser ablation plume propagation

2008 ◽  
Vol 92 (4) ◽  
pp. 907-911 ◽  
Author(s):  
Salvatore Amoruso ◽  
Jørgen Schou ◽  
James G. Lunney
2010 ◽  
Vol 101 (1) ◽  
pp. 209-214 ◽  
Author(s):  
Salvatore Amoruso ◽  
Jørgen Schou ◽  
James G. Lunney

2011 ◽  
Vol 1305 ◽  
Author(s):  
Ikurou Umezu ◽  
Shunto Okubo ◽  
Akira Sugimura

ABSTRACTThe Si nanocrystal-films are prepared by pulsed laser ablation of Si target in a mixture of helium and hydrogen gas. The total gas pressure and hydrogen partial gas pressure were varied to control structure of nanocrystal-film. The surface of Si nanocrystallite was hydrogenated and degree of hydrogenation increased with increasing hydrogen partial gas pressure. The aggregate structure of nanocrystal-film depended on both the total gas pressure and the hydrogen partial gas pressure. The former and the latter alter spatial confinement of Si species during deposition and the surface hydrogenation of individual nanocrystal, respectively. Spatial confinement increases probability of collision between nanocrystals in the plume. While, surface hydrogenation prevents coalescence of nanocrystals. The individual or aggregated nanocrystals formed in the plume reach the substrate and the nanocrystal-film is deposited on the substrate. The non-equilibrium growth processes during pulsed laser ablation are essential for the formation of the surface structure and the subsequent nanocrystal-film growth. Our results indicate that the structure of nanocrystal-film depends on the probabilities of collision and coalescence between nanocrystals in the plume. These probabilities can be varied by controlling the total gas pressure and the hydrogen partial gas pressure.


1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.


2005 ◽  
Vol 97 (6) ◽  
pp. 064904 ◽  
Author(s):  
M. W. Stapleton ◽  
A. P. McKiernan ◽  
J.-P. Mosnier

1999 ◽  
Vol 69 (S1) ◽  
pp. S243-S247 ◽  
Author(s):  
T. Makino ◽  
N. Suzuki ◽  
Y. Yamada ◽  
T. Yoshida ◽  
T. Seto ◽  
...  

2004 ◽  
Author(s):  
Tatsuo Okada ◽  
Kou Kawashima ◽  
Yoshiki Nakata

Sign in / Sign up

Export Citation Format

Share Document