Thin metal filsm: Two and three dimensional behavior of charge carriers

2007 ◽  
pp. 255-290 ◽  
Author(s):  
Horst Hoffmann
Keyword(s):  
Three Dimensional ◽  
Charge Carriers ◽  
Thin Metal

Analysis of migration paths in fast-ion conductors with Voronoi–Dirichlet partition

2006 ◽  
Vol 62 (6) ◽  
pp. 1010-1018 ◽  
Author(s):  
Vladislav A. Blatov ◽  
Gregory D. Ilyushin ◽  
Olga A. Blatova ◽  
Nataly A. Anurova ◽  
Alexej K. Ivanov-Schits ◽  
...  
Keyword(s):  
Alkali Metals ◽  
Three Dimensional ◽  
Charge Carriers ◽  
Alkali Cations ◽  
Fast Ion Conductors ◽  
And Migration ◽  
Crystal Space ◽  
Fast Ion ◽  
Dirichlet Partition ◽  
Ion Conductors

In terms of the Voronoi–Dirichlet partition of the crystal space, definitions are given for such concepts as `void', `channel' and `migration path' for inorganic structures with three-dimensional networks of chemical bonds. A number of criteria are proposed for selecting significant voids and migration channels for alkali cations Li+–Cs+ based on the average characteristics of the Voronoi–Dirichlet polyhedra for alkali metals in oxygen-containing compounds. A general algorithm to analyze the voids in crystal structures has been developed and implemented in the computer package TOPOS. This approach was used to predict the positions of Li+ and Na+ cations and to analyze their possible migration paths in the solid superionic materials Li3 M 2P3O12 (M = Sc, Fe; LIPHOS) and Na1 + x Zr2Si x P3 − x O12 (NASICON), whose framework structures consist of connected M octahedra and T tetrahedra. Using this approach we determine the most probable places for charge carriers (coordinates of alkali cations) and the dimensionality of their conducting sublattice with high accuracy. The theoretically calculated coordinates of the alkali cations in MT frameworks are found to correlate to within 0.33 Å with experimental data for various phases of NASICON and LIPHOS. The proposed method of computer analysis is universal and suitable for investigating fast-ion conductors with other conducting components.

Development of Thin Metal Film Deposition Process for the Intravascular Catheter

1999 ◽  
Author(s):  
Seok Chung ◽  
Jun Keun Chang ◽  
Dong Chul Han
Keyword(s):  
Metal Film ◽  
Three Dimensional ◽  
Deposition Process ◽  
Medical Application ◽  
Thin Metal Film ◽  
Film Deposition ◽  
Thin Metal ◽  
Mems Devices ◽  
Sensors And Actuators ◽  
Custom Made

Abstract To make some MF.MS devices such as sensors and actuators be useful in the medical application, it is required to integrate this devices with power or sensor lines and to keep the hole devices biocompatible. Integrating micro machined sensors and actuators with conventional copper lines is incompatible because the thin copper lines are not easy to handle in the mass production. To achieve the compatibility of wiring method between MEMS devices, we developed the thin metal film deposition process that coats micropattered thin copper films on the non silicon-wafer substrate. The process was developed with the custom-made three-dimensional thin film sputter/evaporation system. The system consists of process chamber, two branch chambers, substrate holder unit and linear/rotary motion feedthrough. Thin metal film was deposited on the biocompatible polymer, polyurethane (PellethaneR) and silicone, catheter that is 2 mm in diameter and 1,000 mm in length. We deposited Cr/Cu and Ti/Cu layer and made a comparative study of the deposition processes, sputtering and evaporation. The temperature of both the processes were maintained below 100°C, for the catheter not melting during the processes. To use the films as signal lines connect the signal source to the actuator on the catheter tip, we machined the films into desired patterns with the eximer laser. In this paper, we developed the thin metal film deposition system and processes for the biopolymeric substrate used in the medical MEMS devices.

scholarly journals Formation of Three-Dimensional Electronic Networks Using Axially Ligated Metal Phthalocyanines as Stable Neutral Radicals

Crystals ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 747
Author(s):  
Ryoya Sato ◽  
Masaki Matsuda
Keyword(s):  
Three Dimensional ◽  
Crystal Structure Analysis ◽  
Charge Carriers ◽  
Electronic Systems ◽  
Metal Phthalocyanine ◽  
Molecular Conductors ◽  
Metal Phthalocyanines ◽  
X Ray ◽  
Electronic Networks ◽  
Electrical Resistivities

Organic π-radical crystals are potential single-component molecular conductors, as they involve charge carriers. We fabricated new organic π-radical crystals using axially ligated metal phthalocyanine anions ([MIII(Pc)L2]−) as starting materials. Electrochemical oxidation of [MIII(Pc)L2]− afforded single crystals of organic π-radicals of the type MIII(Pc)Cl2·THF (M = Co or Fe, THF = tetrahydrofuran), where the π-conjugated macrocyclic phthalocyanine ligand is one-electron oxidized. The X-ray crystal structure analysis revealed that MIII(Pc)Cl2 formed three-dimensional networks with π-π overlaps. The electrical resistivities of CoIII(Pc)Cl2·THF and FeIII(Pc)Cl2·THF at room temperature along the a-axis were 6 × 102 and 6 × 103 Ω cm, respectively, and were almost isotropic, meaning that MIII(Pc)Cl2·THF had three-dimensional electronic systems.

218 Fabrication of three-dimensional laminate of thin metal wire using a laser

2014 ◽  
Vol 2014 (0) ◽  
pp. 107-108
Author(s):  
Naoki Maeda ◽  
Tomohisa Tanaka ◽  
Jiang Zhu ◽  
Yoshio Saito
Keyword(s):  
Three Dimensional ◽  
Thin Metal ◽  
Metal Wire ◽  
Thin Metal Wire

Negative Index Metamaterials with Deeply Subwavelength Structural Dimensions from Near Infrared to Visible Based on Thin Filmsββ

2006 ◽  
Vol 964 ◽  
Author(s):  
Vitaliy Lomakin ◽  
Yeshaiahu Fainman ◽  
Gennady Shvets
Keyword(s):  
Near Infrared ◽  
Three Dimensional ◽  
Thin Metal Film ◽  
Thin Metal ◽  
Index Of Refraction ◽  
Negative Permittivity ◽  
Electric Response ◽  
Visible Spectra ◽  
Infra Red ◽  
Unit Cells

ABSTRACTNovel two and three-dimensional doubly negative metamaterials (DNM), viz. metamaterial with simultaneously negative permittivity, permeability, and index of refraction, are introduced. The metamaterials comprise deeply subwavelength periodic unit cells, can be tuned to operate in the near infra-red and visible spectra, and can be manufactured using standard nanofabrication methods with compatible materials. The DNMs' unit cell comprises an optically thin metal film sandwiched between two thin metal strips or patches residing at a small distance from the film. The cavity formed between the strips or patches supports resonances with magnetic and electric response that can be tuned to exist in overlapping frequency bands thus leading to the DNM operation.

scholarly journals A top-down approach for fabricating three-dimensional closed hollow nanostructures with permeable thin metal walls

2017 ◽  
Vol 8 ◽  
pp. 1231-1237 ◽  
Author(s):  
Carlos Angulo Barrios ◽  
Víctor Canalejas-Tejero
Keyword(s):  
Three Dimensional ◽  
Photonic Devices ◽  
Thin Metal ◽  
Silicon Substrates ◽  
Top Down ◽  
Optical Resonance ◽  
Pattern Design ◽  
Design Flexibility ◽  
Microelectronic Fabrication ◽  
Hollow Nanostructures

We report on a top-down method for the controlled fabrication of three-dimensional (3D), closed, thin-shelled, hollow nanostructures (nanocages) on planar supports. The presented approach is based on conventional microelectronic fabrication processes and exploits the permeability of thin metal films to hollow-out polymer-filled metal nanocages through an oxygen-plasma process. The technique is used for fabricating arrays of cylindrical nanocages made of thin Al shells on silicon substrates. This hollow metal configuration features optical resonance as revealed by spectral reflectance measurements and numerical simulations. The fabricated nanocages were demonstrated as a refractometric sensor with a measured bulk sensitivity of 327 nm/refractive index unit (RIU). The pattern design flexibility and controllability offered by top-down nanofabrication techniques opens the door to the possibility of massive integration of these hollow 3D nano-objects on a chip for applications such as nanocontainers, nanoreactors, nanofluidics, nano-biosensors and photonic devices.

scholarly journals Поперечный эффект Нернста-Эттингсгаузена в сверхрешетках при электрон-фононном рассеянии

2018 ◽  
Vol 52 (7) ◽  
pp. 712
Author(s):  
С.Р. Фигарова ◽  
Г.И. Гусейнов ◽  
В.Р. Фигаров
Keyword(s):  
Magnetic Field ◽  
Phonon Scattering ◽  
Electron Gas ◽  
Three Dimensional ◽  
Charge Carriers ◽  
Polar Optical Phonon ◽  
Layer Plane ◽  
Dimensional Electron ◽  
Optical Phonon Scattering ◽  
Dimensional Electron Gas

AbstractThe Nernst–Ettingshausen coefficient is calculated in superlattices with the cosine dispersion law in the case of the scattering of charge carriers at acoustic and polar optical phonons in a magnetic field in the layer plane. A significant increase in the Nernst–Ettingshausen coefficient of a degenerate quasi-three-dimensional electron gas in a weak magnetic field is shown. For polar optical-phonon scattering, the Nernst–Ettingshausen coefficient changes sign in a strong magnetic field.

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