Plasmon Excitations in Thin Metal Films. Transition from Three-Dimensional to Two-Dimensional Behaviour

1986 ◽  
Vol 138 (2) ◽  
pp. 607-620 ◽  
Author(s):  
W. G. Teich ◽  
G. Mahler
Keyword(s):  
Three Dimensional ◽  
Metal Films ◽  
Thin Metal ◽  
Two Dimensional ◽  
Thin Metal Films

Nucleation and Growth Characteristics of Thin Metal Films

1971 ◽  
Vol 29 ◽  
pp. 216-217
Author(s):  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Thin Films ◽  
Three Dimensional ◽  
Metal Films ◽  
Nucleation And Growth ◽  
Growth Characteristics ◽  
Thin Metal ◽  
Nucleation Theory ◽  
Classical Nucleation Theory ◽  
Thin Metal Films ◽  
Initial Deposition

This paper reports observations of nucleation and growth characteristics of thin metal films vapor deposited onto heated sodium chloride substrates. An attempt is made to explain the differences in nucleation and growth characteristics on the basis of classical nucleation theory.Thin metal films were prepared by vapor deposition onto heated NaCl (001) substrates in a commercial vacuum unit using a constant evaporation rate of approximately 1000 Å/sec. In the case of discontinuous thin films, approximately 200 Å of carbon was deposited for support. Samples for electron microscopy were prepared by standard techniques and were observed at 125 kV. Figs. 1(a) to (c) show a growth sequence of gold thin films characterized by 1) the formation of random, three dimensional, isolated nuclei at initial deposition, and their growth with further deposition predominantly by surface diffusion; 2) coalescence of these nuclei forming bigger islands; 3) the flattening of islands and formation of network structure : and 4) the filling up of these network structures with further deposition forming a continuous film.

Film thickness measurement by a cross-sectional SEM

1989 ◽  
Vol 47 ◽  
pp. 728-729
Author(s):  
T. Nagatani ◽  
T. Suzuki ◽  
M. Yamada ◽  
M. Nakagawa
Keyword(s):  
Crystal Surface ◽  
Three Dimensional ◽  
Thickness Measurement ◽  
Metal Films ◽  
Thin Metal ◽  
Objective Lens ◽  
Thin Metal Films ◽  
Cross Sectional ◽  
Particle Distributions ◽  
Electron Microscopes

It is well known that metal films evaporated or sputtered in vacuum are not continuous at a thickness of less than several ten nanometers, but show fine particle distributions or have island granularities as thickness increases. Morphorogy of deposited thin films have been one of the major investigation areas in nucleation, crystal growth, crystal surface studies and so on. There is a room for discussions concerning physical properties such as non-ohmic conductivities of the thin metal films in relation to morphorogy.However, almost all micrographs obtained by electron microscopes, both TEMs and SEMs, showing such thin metal films are two dimensional, that is, there is not much information how deposited films are growing on the substrate. Owing to the recent development of a high resolution SEM having a probe size of smaller than 1nm by a combination of highly excited condenser-objective lens and a field emission electron source, three dimensional information for the thin film can be provided as shown in Fig. 1. These specimens are Pt sputter-coated on Si wafers at room temperature with a so-called “magnetron” sputter coater, and then fractured for crosssection study by the HRSEM.

Metal Microstructures in Advanced CMOS Devices

1996 ◽  
Vol 54 ◽  
pp. 358-359
Author(s):  
L. M. Gignac ◽  
K. P. Rodbell
Keyword(s):  
Grain Boundaries ◽  
Semiconductor Device ◽  
Chemical Vapor ◽  
Microstructural Characterization ◽  
Metal Films ◽  
Thin Metal ◽  
Electrical Performance ◽  
Thin Metal Films ◽  
Chemical Vapor Deposited ◽  
Boundary Properties

As advanced semiconductor device features shrink, grain boundaries and interfaces become increasingly more important to the properties of thin metal films. With film thicknesses decreasing to the range of 10 nm and the corresponding features also decreasing to sub-micrometer sizes, interface and grain boundary properties become dominant. In this regime the details of the surfaces and grain boundaries dictate the interactions between film layers and the subsequent electrical properties. Therefore it is necessary to accurately characterize these materials on the proper length scale in order to first understand and then to improve the device effectiveness. In this talk we will examine the importance of microstructural characterization of thin metal films used in semiconductor devices and show how microstructure can influence the electrical performance. Specifically, we will review Co and Ti silicides for silicon contact and gate conductor applications, Ti/TiN liner films used for adhesion and diffusion barriers in chemical vapor deposited (CVD) tungsten vertical wiring (vias) and Ti/AlCu/Ti-TiN films used as planar interconnect metal lines.

On the electrocatalytic symbiotic synergism between Pt, Ni and Al in plasma vapour deposited PtxNiyAlz thin metal films for water electrolysis

2021 ◽  
Vol 494 ◽  
pp. 229344
Author(s):  
Roelof J. Kriek ◽  
Liesel A. van Heerden ◽  
Anzel Falch ◽  
Malcolm I. Gillespie ◽  
Alaa Y. Faid ◽  
...  
Keyword(s):  
Water Electrolysis ◽  
Metal Films ◽  
Thin Metal ◽  
Thin Metal Films
Sign in / Sign up

Export Citation Format

Share Document