Raman spectroscopy at III–V semiconductor surfaces and overlayers in the monolayer region

2007 ◽  
pp. 177-188
Author(s):  
Jean Geurts
Keyword(s):  
Raman Spectroscopy ◽  
Semiconductor Surfaces ◽  
At Iii

Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance

1998 ◽  
Vol 72 (11) ◽  
pp. 1353-1355 ◽  
Author(s):  
Wojciech Krystek ◽  
Fred H. Pollak ◽  
Z. C. Feng ◽  
M. Schurman ◽  
R. A. Stall
Keyword(s):  
Semiconductor Surfaces ◽  
Nitride Semiconductor ◽  
At Iii

PROBING SURFACES AND INTERFACES WITH OPTICAL TECHNIQUES

1994 ◽  
Vol 01 (04) ◽  
pp. 421-428 ◽  
Author(s):  
DIETRICH R.T. ZAHN
Keyword(s):  
Raman Spectroscopy ◽  
Semiconductor Surfaces ◽  
Growth Monitoring ◽  
Vibrational Modes ◽  
Optical Techniques ◽  
Group V ◽  
Group Iii ◽  
Surface Sensitivity ◽  
Surfaces And Interfaces ◽  
Semiconductor Substrates

The potential of optical techniques for probing semiconductor surfaces and interfaces is discussed using the example of Raman spectroscopy. The surface sensitivity of the technique is demonstrated by the detection of vibrational modes of atomic monolayers on semiconductor substrates, for instance arsenic on silicon(111). The special feature of Raman spectroscopy, namely its chemical sensivity, is illustrated by two examples: the interdiffusion of group III overlayers, e.g., In on the group V substrate Sb and the detection of reacted layers at II–VI/III– V heterointerfaces. The example of II–VI/III–V heteroepitaxy also serves as an example for demonstrating the growth monitoring capabilities of optical techniques.

Hjalmarson-Frenkel core excitonic resonances at III-V semiconductor surfaces

1983 ◽  
Vol 28 (2) ◽  
pp. 957-964 ◽  
Author(s):  
Charles P. Marsh ◽  
John D. Dow ◽  
Roland E. Allen
Keyword(s):  
Semiconductor Surfaces ◽  
At Iii
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