Insitu raman spectroscopy of semiconductor surfaces and interfaces

1995 ◽  
Vol 152 (1) ◽  
pp. 179-189 ◽  
Author(s):  
D. R. T. Zahn
1994 ◽  
Vol 01 (04) ◽  
pp. 421-428 ◽  
Author(s):  
DIETRICH R.T. ZAHN

The potential of optical techniques for probing semiconductor surfaces and interfaces is discussed using the example of Raman spectroscopy. The surface sensitivity of the technique is demonstrated by the detection of vibrational modes of atomic monolayers on semiconductor substrates, for instance arsenic on silicon(111). The special feature of Raman spectroscopy, namely its chemical sensivity, is illustrated by two examples: the interdiffusion of group III overlayers, e.g., In on the group V substrate Sb and the detection of reacted layers at II–VI/III– V heterointerfaces. The example of II–VI/III–V heteroepitaxy also serves as an example for demonstrating the growth monitoring capabilities of optical techniques.


RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44088-44095
Author(s):  
Ning Wu ◽  
Xue-Jing Zhang ◽  
Bang-Gui Liu

Strong Rashba effects at semiconductor surfaces and interfaces have attracted attention for exploration and applications. We show with first-principles investigation that applying biaxial stress can cause tunable and giant Rashba effects in ultrathin KTaO3 (KTO) (001) films.


Author(s):  
T. F. Heinz ◽  
F. J. Himpsel ◽  
M. M. T. Loy ◽  
E. Palange ◽  
E. Burstein

Author(s):  
J. R. Power ◽  
P. Weightman ◽  
T. Farrell ◽  
P. Gerber ◽  
J. Rumberg ◽  
...  

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