Electronic and optical properties of low-dimensional semiconductor structures

2005 ◽  
pp. 71-95
Author(s):  
Joachim Wagner
Keyword(s):  
Optical Properties ◽  
Electronic And Optical Properties ◽  
Semiconductor Structures ◽  
Low Dimensional

Bandgap and Interface Engineering for Advanced Electronic and Photonic Devices

MRS Bulletin ◽  
1991 ◽  
Vol 16 (6) ◽  
pp. 23-29 ◽  
Author(s):  
Federico Capasso
Keyword(s):  
Optical Properties ◽  
Molecular Beam ◽  
Photonic Devices ◽  
Enabling Technology ◽  
Bandgap Engineering ◽  
New Approach ◽  
Electronic And Optical Properties ◽  
Semiconductor Structures ◽  
Spatially Varying ◽  
New Generation

During the last decade a powerful new approach for designing semiconductor structures with tailored electronic and optical properties, bandgap engineering, has spawned a new generation of electronic and photonic devices. Central to bandgap engineering is the notion that by spatially varying the composition and the doping of a semiconductor over distances ranging from a few microns down to ~2.5 Å (~1 monolayer), one can tailor the band structure of a material in a nearly arbitrary and continuous way. Thus semiconductor structures with new electronic and optical properties can be custom-designed for specific applications.The enabling technology which has made bandgap engineering an exciting reality with far reaching implications for science and technology is molecular beam epitaxy (MBE), pioneered by Cho and Arthur in the late 1960s.In the subsequent decade MBE demonstrated jts ability to create ultra-thin (10–100 Å) layers and atomically abrupt interfaces between two different semiconductors (heterojunctions).

Electro-Optical Properties of Excitons in Low-Dimensional Semiconductor Structures

2000 ◽  
Vol 178 (1) ◽  
pp. 51-55 ◽  
Author(s):  
F. Bassani ◽  
G. Czajkowski ◽  
M. Dressler ◽  
L. Silvestri
Keyword(s):  
Optical Properties ◽  
Semiconductor Structures ◽  
Low Dimensional

Strain and layer modulated electronic and optical properties of low dimensional perovskite methylammonium lead iodide: Implications to solar cells

Solar Energy ◽  
2018 ◽  
Vol 173 ◽  
pp. 1315-1322 ◽  
Author(s):  
Narayan N. Som ◽  
P.M.W.P. Sampath ◽  
Shweta D. Dabhi ◽  
Venu Mankad ◽  
Satyam Shinde ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Lead Iodide ◽  
Electronic And Optical Properties ◽  
Low Dimensional ◽  
Methylammonium Lead Iodide

Modulation of electronic and optical properties by surface vacancies in low-dimensional β-Ga2O3

2019 ◽  
Vol 21 (27) ◽  
pp. 14745-14752 ◽  
Author(s):  
Yidan Wei ◽  
Chaoming Liu ◽  
Yanqing Zhang ◽  
Chunhua Qi ◽  
Heyi Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Hybrid Functional ◽  
Electronic And Optical Properties ◽  
Low Dimensional

Calculations using the Heyd–Scuseria–Ernzerhof screened hybrid functional reveal the detailed influence that surface vacancies have on the electronic and optical properties of low-dimensional (LD) β-Ga2O3.

Ab-initio electronic and optical properties of low dimensional systems: From single particle to many-body approaches

2007 ◽  
Vol 601 (13) ◽  
pp. 2696-2701 ◽  
Author(s):  
M. Palummo ◽  
M. Bruno ◽  
O. Pulci ◽  
E. Luppi ◽  
E. Degoli ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ab Initio ◽  
Single Particle ◽  
Many Body ◽  
Electronic And Optical Properties ◽  
Low Dimensional
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