Precipitation phenomena in the solid solutions of nitrogen and carbon in alpha iron below the eutectoid temperature

JOM ◽  
1949 ◽  
Vol 1 (3) ◽  
pp. 252-260 ◽  
Author(s):  
L. J. Dijkstra
Keyword(s):  
Solid Solutions ◽  
Eutectoid Temperature ◽  
Alpha Iron ◽  
Precipitation Phenomena

Intergranular cold brittleness of solid solutions based on alpha iron

1974 ◽  
Vol 17 (1) ◽  
pp. 28-33 ◽  
Author(s):  
E. �. Glikman ◽  
R. �. Bruver ◽  
A. A. Krasov ◽  
S. V. Trubin
Keyword(s):  
Solid Solutions ◽  
Cold Brittleness ◽  
Alpha Iron

Heterogeneous Precipitation at Dislocations

1969 ◽  
Vol 27 ◽  
pp. 70-71
Author(s):  
A. K. Eikum
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Dislocation Loops ◽  
Silver Alloys ◽  
Heterogeneous Precipitation ◽  
Precipitation Phenomena ◽  
Aluminum Base ◽  
Silver Atoms

Precipitation phenomena in concentrated aluminum-base silver alloys have been studied with a variety of techniques including electron microscopy. The purpose of the present work was to investigate the dislocation reactions that occur as silver atoms precipitate (or segregate) under a relatively low supersaturation. Specimens (0.1 mm thick) of Al-1 at. % Ag were quenched from ~500°C into an oil bath at room temperature and aged 30 min. at 265°C. The initial configurations available as sites for heterogeneous precipitation will therefore include perfect prismatic dislocation loops, Frank sessile loops and random segments of grown-in dislocations.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

Optical vibration modes in Hg1-xZnxTe solid solutions near q=0

1989 ◽  
Vol 50 (21) ◽  
pp. 3223-3232 ◽  
Author(s):  
G. Le Bastard ◽  
R. Granger ◽  
S. Rolland ◽  
Y. Marqueton ◽  
R. Triboulet
Keyword(s):  
Solid Solutions ◽  
Vibration Modes ◽  
Optical Vibration
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