Influence of cross-field configuration on the einstein relation in quantum wires of tetragonal semiconductors

1992 ◽  
Vol 72 (2-4) ◽  
pp. 147-159
Author(s):  
K. P. Ghatak
1990 ◽  
Vol 198 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
B. De ◽  
M. Mondal ◽  
S. N. Biswas

ABSTRACTWe have studied the Einstein relation for the diffusivity. mobility ratio (7PT) on the basis of a newly derived electron energy spectrum in QW f tetragonal semiconductors, within the framework of K. P method by considering all types of anisotropies of the energy band parameters. It is found, taking n-Cd3 As2 as an example that the DUTZ increases with electron concentration and decreases with film thickness in an oscillatory manner respectively. The theoretical results are in good aoreement with the suggested experimental method of determining the DMR in degenerate semiconductors having arbitrary dispersion law.


1992 ◽  
Vol 242 ◽  
Author(s):  
Kamakhya P. Ghatak ◽  
Badal De

ABSTRACTin this paper we study the Einstein relation in superlattices of wide-band gap semiconductors under crossfield configuration and the for.-ning materials incorporating spin and broadening of Landau levels, it is found, taking GaAs/AÀAs superlattice as an example that the diffusivity-mobility ratio increases with increasing electron concentration and oscillates with inverse quantizing magnetic field due to SdH effect. Thetheoretical analysis is in agreement with the suggested experimental method of determining the same ratio in degenerate materials having arbitrary dispersion laws.


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