Capacitance-voltage behaviour inp-type ɛ-GaSe single crystal ∥c at different temperatures

1998 ◽  
Vol 20 (2) ◽  
pp. 241-245
Author(s):  
M. K. Anis ◽  
S. H. Zaidi
Keyword(s):  
Single Crystal ◽  
Capacitance Voltage ◽  
Different Temperatures

scholarly journals Modeling of magneto-conductivity of bismuth selenide: a topological insulator

2021 ◽  
Vol 3 (4) ◽  
Author(s):  
Yogesh Kumar ◽  
Rabia Sultana ◽  
Prince Sharma ◽  
V. P. S. Awana
Keyword(s):  
Magnetic Field ◽  
Magnetic Fields ◽  
Single Crystal ◽  
Single Crystals ◽  
X Ray Diffraction ◽  
Field Range ◽  
X Ray ◽  
Bulk Carriers ◽  
Different Temperatures

AbstractWe report the magneto-conductivity analysis of Bi2Se3 single crystal at different temperatures in a magnetic field range of ± 14 T. The single crystals are grown by the self-flux method and characterized through X-ray diffraction, Scanning Electron Microscopy, and Raman Spectroscopy. The single crystals show magnetoresistance (MR%) of around 380% at a magnetic field of 14 T and a temperature of 5 K. The Hikami–Larkin–Nagaoka (HLN) equation has been used to fit the magneto-conductivity (MC) data. However, the HLN fitted curve deviates at higher magnetic fields above 1 T, suggesting that the role of surface-driven conductivity suppresses with an increasing magnetic field. This article proposes a speculative model comprising of surface-driven HLN and added quantum diffusive and bulk carriers-driven classical terms. The model successfully explains the MC of the Bi2Se3 single crystal at various temperatures (5–200 K) and applied magnetic fields (up to 14 T).

Comparison of Microwave ECR and RF Plasmas for Dry Etching of Single Crystal 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
J. R. Flemish ◽  
K. Xie ◽  
W. Buchwald ◽  
L. Casas ◽  
J. H. Zhao ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Electron Cyclotron Resonance ◽  
Schottky Diodes ◽  
Substrate Bias ◽  
Rf Plasmas ◽  
Ecr Plasma ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Etch Rates

ABSTRACTElectron cyclotron resonance (ECR) plasma etching of single crystal 6H-SiC has been investigated using a CF4/O2 gas mixture and compared to conventional reactive ion etching (RIE) in a radio frequency (13.56 MHz) reactor. The use of ECR results in higher etch rates, lower levels of bias and smoother etched surfaces than rf-RIE. ECR etch rates exceeding 100 nm/min have been obtained at a substrate bias of-100 V. Etch rate and surface morphology have been studied as a function of pressure, bias and power. Auger electron spectroscopy shows that ECR etching leaves no residues unlike rf-RIE which leaves residues containing Al, F, O and C. The current-voltage and capacitance-voltage measurements of Schottky diodes show that there is far less damage induced by ECR etching compared to rf-RIE.

scholarly journals Effect of neodymium doping on structural, microscopic and electrical properties of barium phosphate system

2014 ◽  
Vol 04 (02) ◽  
pp. 1450007 ◽  
Author(s):  
Shivani Suri ◽  
Vishal Singh ◽  
K. K. Bamzai
Keyword(s):  
Electrical Properties ◽  
Single Crystal ◽  
Stoichiometric Composition ◽  
Solution Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Different Temperatures ◽  
Temperature Solution ◽  
Flower Type ◽  
Phosphate System

Neodymium-doped barium phosphate (NdBP) was prepared as single crystal by room temperature solution technique known as gel encapsulation technique. Single crystal X-ray diffraction shows that the crystal belongs to orthorhombic system. The flower type morphology was observed by scanning electron microscope (SEM) and the stoichiometric composition of the prepared crystal was observed by energy dispersive X-ray analysis (EDAX). The presence of functional group and other groups was studied by Fourier transform infrared spectroscopy (FTIR). The electrical properties of these materials like dielectric constant (ε′), dielectric loss (tanδ) and ac conductivity [ln(σac)] was studied at different temperatures ranging from 40°C to 420°C in the frequency range of 5 kHz to 1 MHz. The activation energy values decreases with increase in frequency suggesting that the conduction mechanism is because of hopping of charge carriers.

scholarly journals Electronic Properties and Density of States of Self-Assembled GaSb/GaAs Quantum Dots

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
T. Nowozin ◽  
A. Wiengarten ◽  
L. Bonato ◽  
D. Bimberg ◽  
Wei-Hsun Lin ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Density Of States ◽  
Deep Level ◽  
Material System ◽  
A Value ◽  
Capacitance Voltage ◽  
Different Temperatures ◽  
Self Assembled ◽  
Transient Spectroscopy ◽  
The Individual

The electronic properties of a self-assembled GaSb/GaAs QD ensemble are determined by capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The charging and discharging bias regions of the QDs are determined for different temperatures. With a value of 335 (±15) meV the localization energy is rather small compared to values previously determined for the same material system. Similarly, a very small apparent capture cross section is measured (1·10−16 cm2). DLTS signal analysis yields an equivalent to the ensemble density of states for the individual energies as well as the density function of the confinement energies of the QDs in the ensemble.

scholarly journals Synthesis, Growth, and Characterization of Bisglycine Hydrobromide Single Crystal

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Koteeswari Pandurangan ◽  
Sagadevan Suresh
Keyword(s):  
Single Crystal ◽  
Grown Crystal ◽  
Second Harmonic ◽  
Green Light ◽  
Etch Pits ◽  
Modes Of Vibration ◽  
Different Temperatures ◽  
Evaporation Technique ◽  
Angle Method ◽  
Unit Cell Dimensions

Single crystals of BGHB were grown by slow evaporation technique. The unit cell dimensions and space group of the grown crystals were confirmed by single crystal X-ray diffraction. The modes of vibration of the molecules and the presence of functional groups were identified using FTIR technique. The microhardness study shows that the Vickers hardness number of the crystal increases with the increase in applied load. The optical properties of the crystals were determined using UV-Visible spectroscopy. The thermal properties of the grown crystal were also determined. The refractive index was determined as 1.396 using Brewster’s angle method. The emission of green light on passing the Nd: YAG laser light confirmed the second harmonic generation property of the crystals and the SHG efficiency of the crystals was found to be higher than that of KDP. The dielectric constant and dielectric loss measurements were carried out for different temperatures and frequencies. The ac conductivity study of the crystals was also discussed. The photoconductivity studies confirm that the grown crystal has negative photoconductivity nature. The etching studies were carried out to study the formation of etch pits.

scholarly journals Pyroelectric Energy Harvesting: With Thermodynamic-Based Cycles

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Saber Mohammadi ◽  
Akram Khodayari
Keyword(s):  
Energy Harvesting ◽  
Single Crystal ◽  
Ferroelectric Materials ◽  
Temperature Variations ◽  
Thermodynamic Cycles ◽  
Sensor Applications ◽  
Different Temperatures

This work deals with energy harvesting from temperature variations using ferroelectric materials as a microgenerator. The previous researches show that direct pyroelectric energy harvesting is not effective, whereas thermodynamic-based cycles give higher energy. Also, at different temperatures some thermodynamic cycles exhibit different behaviours. In this paper pyroelectric energy harvesting using Lenoir and Ericsson thermodynamic cycles has been studied numerically and the two cycles were compared with each other. The material used is the PMN-25 PT single crystal that is a very interesting material in the framework of energy harvesting and sensor applications.

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