650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

2006 ◽  
Vol 2 (4) ◽  
pp. 263-265
Author(s):  
Wei Xia ◽  
Shu-qiang Li ◽  
Ling Wang ◽  
De-ying Ma ◽  
Xin Zhang ◽  
...  
Keyword(s):  
Active Layer ◽  
Laser Diodes ◽  
Low Threshold

Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer

2000 ◽  
Vol 36 (15) ◽  
pp. 1284 ◽  
Author(s):  
S. Honda ◽  
T. Miyake ◽  
T. Ikegami ◽  
K. Yagi ◽  
Y. Bessho ◽  
...  
Keyword(s):  
Refractive Index ◽  
Active Layer ◽  
Laser Diodes ◽  
Low Threshold ◽  
Real Refractive Index

Reliable high-power (40 mW) operation of transverse-mode stabilised InGaAlP laser diodes with strained active layer

1992 ◽  
Vol 28 (11) ◽  
pp. 1069-1070 ◽  
Author(s):  
K. Nitta ◽  
M. Okajima ◽  
Y. Nishikawa ◽  
K. Itaya ◽  
G. Hatakoshi
Keyword(s):  
Active Layer ◽  
High Power ◽  
Laser Diodes ◽  
Transverse Mode

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (14) ◽  
pp. 1248-1250 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
Akbar Nouhi ◽  
Gouri Radhakrishnan ◽  
John K. Liu ◽  
Robert J. Lang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Peak Power ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Peak ◽  
High Peak Power ◽  
Si Substrates ◽  
Low Threshold ◽  
Stripe Laser
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