Piezoresistive effect in p-type polycrystalline diamond films

1999 ◽  
Vol 42 (7) ◽  
pp. 769-777
Author(s):  
Liang Fang ◽  
Wanlu Wang ◽  
Peidao Ding ◽  
Kejun Liao ◽  
Jian Wang
Keyword(s):  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Piezoresistive Effect ◽  
P Type

THEORETICAL STUDIES ON PIEZORESISTIVE EFFECT OF P-TYPE DIAMOND FILMS

2002 ◽  
Vol 16 (06n07) ◽  
pp. 916-921
Author(s):  
W. L. WANG ◽  
K. J. LIAO ◽  
C. Z. CAI ◽  
C. Y. KONG ◽  
S. X. WANG
Keyword(s):  
Diamond Films ◽  
Uniaxial Stress ◽  
Theoretical Description ◽  
Boltzmann Transport ◽  
Piezoresistive Effect ◽  
Relaxation Time Approximation ◽  
Hole Band ◽  
Mixed Scattering ◽  
P Type ◽  
Good Agreement

In this paper, based on the Fuchs and Sondheimer theory and valence band split-off model, a theoretical description of the piezoresistive effect in P-type heteroepitaxial diamond films was presented by solving the Boltzmann transport equation in the relaxation time approximation, in which a mixed scattering by lattice vibration, ionized impurities and surface was considered. A calculating expression of the piezoresistive effect has been developed in a parallel connection resistance model for the light-hole band, the heavy-hole band and the split-off band. The calculating results were in good agreement with the experimental data, indicating that the prezoresistive effect in diamond films was mainly ascribed to the hole band split-off under a uniaxial stress.

Polycrystalline Diamond Film Resistors

1992 ◽  
Vol 242 ◽  
Author(s):  
L. M. Edwards ◽  
J. L. Davidson
Keyword(s):  
Diamond Film ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Plasma Cvd ◽  
Microwave Plasma Cvd ◽  
P Type ◽  
Polycrystalline Diamond Film ◽  
Effective Source

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

Electrical Properties of Hydrogen Terminated P-Type Diamond Film

2010 ◽  
Vol 663-665 ◽  
pp. 625-628
Author(s):  
Fu Yuan Xia ◽  
Lin Jun Wang ◽  
Jian Huang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
P Type ◽  
Effect Method

Undoped high quality polycrystalline diamond films were grown by the microwave plasma chemical vapor deposition (MPCVD) method. The effects of hydrogen plasma treatment and vacuum annealing process on the p-type behavior of diamond films were investigated by the Hall effect method. The sheet carrier concentration increased and the sheet resistivity decreased with the treating time of hydrogen plasma and a stable value was achieved finally. After annealing the samples in vacuum at temperature above 600 °C, the sheet carrier concentration dropped dramatically. The origin of this hydrogen terminated p-type conductive layers is also discussed.

scholarly journals The Hydrogenation Impact on Electronic Properties of p-Diamond/n-Si Heterojunctions

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6615
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska ◽  
...  
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Point Of View ◽  
Hydrogen Passivation ◽  
Temperature Dependent ◽  
Current Voltage ◽  
P Type ◽  
Hot Filament

The undoped polycrystalline diamond films (PDFs) have been deposited on n-type silicon (Si) by Hot Filament Chemical Vapor Deposition (HF CVD) technique. The reaction gases are a mixture of methane and hydrogen. The obtained PDFs were characterized by scanning electron microscopy (SEM) and Raman spectroscopy which, in addition to the diamond phase, also confirms the presence of sp2 hybridized carbon bonds. As-grown CVD diamond layers are hydrogen terminated and show p-type conductivity. The effect of the level of hydrogenation on the electrical properties of p-diamond/n-Si heterojunctions has been investigated by temperature dependent current–voltage (J-V/T) characteristics. The obtained results suggest that the energy distribution of interface states at the grain boundary (GB) subjected to hydrogenation becomes shallower, and the hole capture cross-section can be reduced. Hydrogenation can lead to a significant reduction of the GB potential barrier. These results can be interesting from the point of view of hydrogen passivation of GBs in microelectronics.

Characterization of homoepitaxial diamond films by Electron microscopy

1991 ◽  
Vol 49 ◽  
pp. 880-881
Author(s):  
D.P. Malta ◽  
S.A. Willard ◽  
R.A. Rudder ◽  
G.C. Hudson ◽  
J.B. Posthill ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Defects ◽  
Substrate Surface ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Large Degree ◽  
Rf Plasma ◽  
Semiconducting Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. A major goal of current device-related diamond research is to achieve a high quality epitaxial film on an inexpensive, readily available, non-native substrate. One step in the process of achieving this goal is understanding the nucleation and growth processes of diamond films on diamond substrates. Electron microscopy has already proven invaluable for assessing polycrystalline diamond films grown on nonnative surfaces.The quality of the grown diamond film depends on several factors, one of which is the quality of the diamond substrate. Substrates commercially available today have often been found to have scratched surfaces resulting from the polishing process (Fig. 1a). Electron beam-induced current (EBIC) imaging shows that electrically active sub-surface defects can be present to a large degree (Fig. 1c). Growth of homoepitaxial diamond films by rf plasma-enhanced chemical vapor deposition (PECVD) has been found to planarize the scratched substrate surface (Fig. 1b).

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