Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processes

1993 ◽  
Vol 22 (8) ◽  
pp. 847-851 ◽  
Author(s):  
D. D. Edwall
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Growth Processes ◽  
Compositional Uniformity ◽  
Direct Alloy

Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (1S1) ◽  
pp. 01AD04 ◽  
Author(s):  
Tasuku Murase ◽  
Tomoyuki Tanikawa ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Drastic Reduction ◽  
Organic Vapor ◽  
Metal Organic

Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique

2000 ◽  
Vol 639 ◽  
Author(s):  
H. Miyake ◽  
H. Mizutani ◽  
K. Hiramatsu ◽  
Y. Iyechika ◽  
Y. Honda ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density ◽  
Window Region

ABSTRACTGaN layers with low dislocation density have been fabricated be means of facet-controlled epitaxial lateral overgrowth (FACELO) via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The distribution of the dislocations in FACELO GaN was inspected by observation of InGaN growth pits. For FACELO with {11-20} facets as the first step, the dislocations concentrate only in the window region. For FACELO with {11-22} facets as the first step, the dislocations exist only in the coalescence region. The double FACELO, which was FACELO with {11-20} on FACELO with {11-22}, was demonstrated and dislocation density of less than 105 cm−2 was achieved.

Recent Progress in The Omvpe Growth of HgCdTe

1989 ◽  
Vol 161 ◽  
Author(s):  
Sorab K. Ghandhi
Keyword(s):  
Vapor Phase ◽  
Infrared Detectors ◽  
Mercury Cadmium Telluride ◽  
Recent Progress ◽  
Rapid Development ◽  
Far Infrared ◽  
Organometallic Vapor Phase Epitaxy ◽  
Far Infrared Detectors ◽  
Recent Developments ◽  
Direct Alloy

ABSTRACTThe last two years has seen rapid development in the growth of mercury cadmium telluride material for use in far infrared detectors. This paper will briefly review the progress before this period, and will focus on recent developments in these materials.The emphasis will be on the direct alloy growth of HgCdTe material by organometallic vapor phase epitaxy (OMVPE).

Correlation between Dislocation Density and the Macroscopic Properties of GaN Grown by Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 38 (Part 2, No. 10B) ◽  
pp. L1159-L1162 ◽  
Author(s):  
Atsushi Watanabe ◽  
Hirokazu Takahashi ◽  
Toshiyuki Tanaka ◽  
Hiroyuki Ota ◽  
Kiyofumi Chikuma ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Macroscopic Properties

Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DH02 ◽  
Author(s):  
Takuya Iwabuchi ◽  
Yuhuai Liu ◽  
Takeshi Kimura ◽  
Yuantao Zhang ◽  
Kiattiwut Prasertsuk ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Phase Purity
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